DF200R12KE3 Infineon Technologies, DF200R12KE3 Datasheet - Page 2

• Manufacturer Part Number: DF200R12KE3
• Description: IGBT Transistors 1200V 200A DUAL
• Manufacturer: Infineon Technologies

Specifications of DF200R12KE3

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.04 KW
• Maximum Operating Temperature: + 125 C
• Package / Case: IS5a ( 62 mm )-5
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Ic (max): 200.0 A
• Vce(sat) (typ): 1.7 V
• Technology: IGBT3
• Housing: 62 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Transistor Wechselrichter / transistor inverter
Einschaltverzögerungszeit (induktive Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (induktive Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
Kurzschlussverhalten
SC data
Modulinduktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
Inversdiode / free wheel diode
Durchlassspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Ausschaltenergie pro Puls
reverse recovery energy
Charakteristische Werte / characteristic values
Charakteristische Werte / characteristic values
Technische Information / technical information
DF200R12KE3
I
V
V
I
V
V
I
V
V
I
V
V
I
V
I
V
t
V
T
I
I
I
V
V
I
V
V
I
V
V
C
C
C
C
C
C
P
F
F
F
F
F
c
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
CC
= 200A, V
= 200A, V
=200A, -di
R
R
=200A, -di
R
R
= 200A, -di
R
R
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 200A, V
= 25°C
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= 600V, V
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= ±15V, R
= 900V, V
10µs, V
GE
GE
CC
CC
CC
CC
CC
CC
GE
F
F
GE
GE
GE
GE
F
GE
GE
/dt= 2000A/µs
/dt= 2000A/µs
2 (8)
/dt= 2000A/µs
G
G
G
G
G
G
G
G
G
G
CEmax
= 0V, T
= 0V, T
= 600V
= 600V
= 600V
= 600V
= 600V, L = 80nH
= 600V, L = 80nH
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= -15V, T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
= 3,6 , T
15V, T
= V
vj
vj
CES
= 25°C
= 125°C
Vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
- L
125°C
CE
·di/dt
R
L
CC´/EE´
t
t
E
E
E
I
I
d,on
d,off
V
Q
RM
SC
t
t
rec
on
off
CE
r
f
F
r
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DB_DF200R12KE3_3.0
0,25
0,30
0,09
0,10
0,55
0,65
0,13
0,18
1,65
1,65
typ.
800
150
190
0,7
15
35
20
20
36
17
9
2002-10-07
max.
2,15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
m
mJ
mJ
nH
µC
µC
mJ
mJ
µs
µs
µs
µs
µs
µs
µs
µs
A
V
V
A
A