EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 12
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EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
SuperSOT™-3/SOT-23 (Continued)
FDN304PZ
FDN302P
FDN340P
FDN342P
FDN338P
FDN308P
FDN336P
NDS356P
NDS332P
NDS352P
FDN306P
Products
Min. (V)
BV
-20
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.052
0.055
0.115
0.125
4.5V
0.07
0.08
0.04
0.2
0.3
Max (Ω) @ V
2-7
0.41@2.7V
0.155
2.5V
0.07
0.08
0.11
0.13
0.19
0.27
0.05
GS
=
Replaced by NDS356AP
Replaced by NDS352AP
Bold = New Products (introduced January 2003 or later)
1.8V
0.08
0.1
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
4.4
3.8
3.6
3.7
12
12
9
8
= 5V
I
D
2.4
2.4
1.6
1.5
1.2
2.6
2
2
1
(A)
MOSFETs
P
D
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
(W)