EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 15
EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
SuperSOT-6/TSOP-6
FDC6401N
FDC6305N
FDC637AN
FDC6303N
FDC6301N
FDC6561AN
FDC633N
FDC645N
FDC655AN
FDC653N
NDC651N
NDC7002N
FDC5612
FDC3512
FDC3601N
FDC3612
FDC2512
FDC2612
FDC6420C
FDC6327C
FDC6320C
FDC6322C
FDC6321C
FDC6432SH
FDC6333C
NDC7001C
NDC7003P
FDC5614P
FDC6506P
FDC658P
FDC654P
NDC652P
FDC6304P
FDC6302P
USB10H
FDC6312P
FDC6310P
SuperSOT-6/TSOP-6 N-Channel
SuperSOT-6/TSOP-6 Complementary N- and P-Channel
SuperSOT-6/TSOP-6 P-Channel
Products
Min. (V)
30 | –30
60 | –60
20 | -20
20 | -20
25 | -25
25 | -25
25 | -25
30 | -12
BV
100
100
150
200
-60
-60
-30
-30
-30
-30
-25
-25
-20
-20
-20
20
20
20
25
25
30
30
30
30
30
30
50
60
80
DSS
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.095 | 0.15 0.15 | 0.22
0.095
0.026
0.027
0.035
0.055
0.077
0.125
0.425
0.725
0.105
0.075
10V
0.06
0.09
2 | 5
0.17
0.05
0.11
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
5
0.07 | 0.125
0.09 | 0.105
0.064@6V
0.088@6V
0.135@6V
0.475@6V
0.08 | 0.17
0.55@6V
0.45 | 1.1
4 | 7.5
4.5V
0.024
0.145
0.042
0.035
0.055
0.135
0.075
0.125
0.115
0.125
R
0.07
0.08
0.45
0.03
0.09
0.28
0.18
1.1
10
DS(ON)
4
–
–
–
–
7
–
2-10
Max (Ω) @ V
5@2.7V | 1.5@2.7V
5@2.7V | 13@2.7V
0.095 | 0.19
0.12 | 0.25
0.6@2.7V
1.5@2.7V
13@2.7V
5@2.7V
2.5V
0.095
0.032
0.054
0.125
0.155
0.12
0.19
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
0.225
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
3.25 | 2.85
0.29 | 0.23
g
1.64 | 1.1
3.3 | 3.7
2.5 | 5.7
4.7 | 4.1
1.1 | 1.6
0.49 | 1
Typ. (nC)
10.5
1.64
0.49
12.5
10.5
0.22
GS
3.3
3.5
2.1
3.7
1.6
2.3
6.2
1.1
4.4
3.7
11
13
12
10
13
14
15
9
1
8
8
8
3
= 5V
0.22 | 0.12
0.22 | 0.46
0.68 | 0.46
0.51 | 0.34
2.7 | 1.9
2.4 | 2.5
3 | 2.2
2.5 | 2
I
D
0.68
0.22
0.51
0.34
0.46
0.12
-1.9
2.7
6.2
2.5
5.2
5.5
6.3
3.2
4.3
2.6
1.4
1.1
1.8
3.6
2.4
2.3
2.2
3
5
3
1
3
4
(A)
MOSFETs
P
D
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.96
0.9
1.6
0.9
0.9
0.9
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
0.9
0.9
0.9
1.3
1.6
1.6
1.6
1.6
0.9
0.9
(W)