EGP20G Fairchild Semiconductor, EGP20G Datasheet - Page 120
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EGP20G
Manufacturer Part Number
EGP20G
Description
DIODE FAST GPP 2A 400V DO-15
Manufacturer
Fairchild Semiconductor
Specifications of EGP20G
Voltage - Forward (vf) (max) @ If
1.25V @ 2A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 400V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Power Dissipation
3.15 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20G
Manufacturer:
VISHAY
Quantity:
50 000
Part Number:
EGP20G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGP20G-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
4 310
Part Number:
EGP20G-E3/54
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.fairchildsemi.com
Small Signal Transistors – RF Amplifier Transistors
SOT-23 NPN Configuration
KST5179
MMBT5179
MMBT918
KSC2757
MMBT5770
KSC2223
KSC2756
KSC3123
KST10
MMBTH10
MMBTH11
KSC2755
KSC2715
MMBTH24
KST24
MMBTH10RG
MMBTH34
SOT-23 PNP Configuration
MMBTH81
TO-92 NPN Configuration
2N3663
KSP5179
MPS5179
PN5179
2N5770
PN3563
PN918
SS9018
KSC1730
BF494
KSC1674
KSC1187
KSP10
Products
V
CEO
12
12
15
15
15
20
20
20
25
25
25
30
30
30
30
40
40
20
12
12
12
12
15
15
15
15
15
20
20
20
25
(V)
V
CBO
20
20
30
30
30
30
30
30
30
30
30
30
35
40
40
40
40
20
30
20
20
20
30
30
30
30
30
30
30
30
30
(V) V
EBO
2
2
3
5
4
4
4
3
3
3
3
5
4
4
4
4
4
3
3
2
2
2
4
2
3
5
5
5
4
4
3
(V)
Max (A)
0.045
0.05
0.05
0.05
0.05
0.09
0.02
0.03
0.05
0.05
0.05
0.02
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.02
0.03
0.1
I
–
–
–
C
(MHz)
900
900
600
800
400
500
900
650
650
650
400
100
400
400
450
500
600
700
900
900
900
600
600
700
800
400
400
650
f
–
–
–
T
2-115
Discrete Power Products –
Min
25
25
20
60
50
40
60
60
60
60
60
60
70
30
30
50
40
60
20
25
25
25
50
20
20
28
40
65
40
40
60
Max
250
240
200
180
240
240
240
240
120
250
250
250
200
200
198
240
220
240
240
–
–
–
–
–
–
–
–
–
–
–
–
h
Bold = New Products (introduced January 2003 or later)
@V
FE
10
10
10
10
10
10
10
10
12
10
10
15
10
10
10
10
10
10
10
10
CE
1
1
1
6
6
1
1
1
1
5
6
(V) @I
C
3
3
3
5
8
1
5
5
4
4
4
3
2
8
8
1
7
5
8
3
3
3
8
8
3
1
5
1
1
2
4
(mA)
Bipolar Transistors and JFETs
Max (V)
0.4
0.4
0.4
0.5
0.4
0.3
0.5
0.5
0.5
0.5
0.4
0.2
0.5
0.4
0.4
0.4
0.4
0.4
0.5
0.5
0.3
0.5
–
–
–
–
–
–
–
–
–
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
–
–
–
–
–
–
–
–
–
4
4
4
5
4
(mA) @I
B
0.4
0.4
0.4
0.5
0.4
–
–
–
–
–
–
–
–
–
1
1
1
1
1
1
1
1
5
1
1
1
1
1
1
1
1
(mA)