IDH04SG60C Infineon Technologies, IDH04SG60C Datasheet - Page 2

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IDH04SG60C

Manufacturer Part Number
IDH04SG60C
Description
DIODE SCHOTTKY 600V 4A TO220-2
Manufacturer
Infineon Technologies
Series
thinQ!™r
Datasheet

Specifications of IDH04SG60C

Voltage - Forward (vf) (max) @ If
2.3V @ 4A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
4A (DC)
Current - Reverse Leakage @ Vr
25µA @ 600V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
80pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Technology
thinQ!™ 3G
V
600.0 V
If (typ)
4.0 A
Qc (typ)
4.5 nC
Package
TO-220 real 2pin
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
 Details
Other names
SP000607026

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDH04SG60C
Manufacturer:
Infineon
Quantity:
495
Part Number:
IDH04SG60C
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IDH04SG60C
Quantity:
15
Rev. 2.2
1)
2)
3)
di/dt), different from t
absence of minority carrier injection.
4)
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
Static characteristics
DC blocking voltage
Diode forward voltage
Reverse current
AC characteristics
Total capacitive charge
Switching time
Total capacitance
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 10ms, at 20mA.
t
Only capacitive charge occuring, guaranteed by design
c
is the time constant for the capacitive displacement current waveform (independent from T
3)
rr
which is dependent on T
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
T
V
V
I
Q
t
C
R
c
sold
DC
F
thJC
thJA
c
j
, I
SMD version, device
on PCB, minimal
footprint
1.6 mm (0.063 in.)
from case for 10 s
I
I
I
V
V
V
di
T
V
V
V
LOAD
R
F
F
page 2
j
=4 A, T
=4 A, T
R
R
R
R
R
R
=0.05 mA, T
=150 °C
F
=600 V, T
=600 V, T
=400 V,I
=1 V, f =1 MHz
=300 V, f =1 MHz
=600 V, f =1 MHz
/dt =200 A/µs,
and di/dt. No reverse recovery time constant t
j
j
=25 °C
=150 °C
F
≤I
j
j
=25 °C
=150 °C
j
F,max
=25 °C
,
min.
600
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
2.1
2.8
0.3
1.3
4.5
80
10
10
-
-
-
-
-
IDH04SG60C
max.
260
270
<10
j
3.5
2.3
, I
62
25
-
-
-
-
-
-
LOAD
rr
and
due to
Unit
K/W
°C
V
µA
nC
ns
pF
2009-03-04

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