IDH04SG60C Infineon Technologies, IDH04SG60C Datasheet - Page 4

• Manufacturer Part Number: IDH04SG60C
• Description: DIODE SCHOTTKY 600V 4A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH04SG60C

• Voltage - Forward (vf) (max) @ If: 2.3V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 4.5 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: SP000607026

Rev. 2.2
5 Typ. capacitance charge vs. current slope
Q
7 Transient thermal impedance
Z
thJC
C
10
10
10
10
=f(di
-1
-2
1
0
=f(t
5
4
3
2
1
0
10
100
-5
0.02
0.05
F
p
0.1
/dt )
); parameter: D = t
0.2
0.5
4)
; I
F
10
≤I
-4
F,max
400
di
F
/dt [A/µs]
10
t
P
P
/T
-3
[s]
700
10
-2
1000
10
page 4
-1
6 Typ. reverse current vs. reverse voltage
I
8 Typ. capacitance vs. reverse voltage
C =f(V
R
=f(V
1E-1
1E-2
1E-3
1E-4
1E1
1E0
90
75
60
45
30
15
R
100
R
0
); parameter: T
); T
10
175 °C
150 °C
100 °C
25 °C
-55 °C
0
C
=25 °C, f =1 MHz
200
10
300
j
1
V
R
V
[V]
R
[V]
400
10
2
IDH04SG60C
500
600
2009-03-04
10
3