IDH04SG60C Infineon Technologies, IDH04SG60C Datasheet - Page 3

• Manufacturer Part Number: IDH04SG60C
• Description: DIODE SCHOTTKY 600V 4A TO220-2
• Manufacturer: Infineon Technologies
• Series: thinQ!™r

Specifications of IDH04SG60C

• Voltage - Forward (vf) (max) @ If: 2.3V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A (DC)
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 80pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Technology: thinQ!™ 3G
• V: 600.0 V
• If (typ): 4.0 A
• Qc (typ): 4.5 nC
• Package: TO-220 real 2pin
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Details
• Other names: SP000607026

Rev. 2.2
1 Power dissipation
P
3 Typ. forward characteristic
I
F
tot
=f(V
=f(T
45
40
35
30
25
20
15
10
F
5
0
5
4
3
2
1
0
); t
C
25
0
); parameter: R
p
=400 µs; parameter:T
50
1
75
thJC(max)
-55ºC
T
C
100
V
[°C]
2
25ºC
F
100ºC
[V]
j
175ºC
150ºC
125
3
150
175
page 3
4
2 Diode forward current
I
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
30
25
20
15
10
15
12
F
C
5
0
9
6
3
0
); t
); T
25
0
p
=400 µs; parameter: T
j
≤175 °C; parameter: D = t
0.7
1
0.3
0.5
2
0.1
75
100ºC
150ºC
T
175ºC
C
V
4
[°C]
-55ºC
F
[V]
25ºC
j
125
p
IDH04SG60C
/T
6
2009-03-04
175
8