FGH80N60FD2TU Fairchild Semiconductor, FGH80N60FD2TU Datasheet - Page 3

• Manufacturer Part Number: FGH80N60FD2TU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH80N60FD2TU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH80N60FD Rev. A2
Electrical Characteristics of the Diode
V
t
I
Q
Symbol
rr
rr
FM
rr
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Current
Diode Reverse Recovery Charge
Parameter
I
I
F
ES
= 15A
=15A, dI
Test Conditions
ES
T
/dt = 200A/s
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25C
= 125C
= 25C
= 125C
= 25C
= 125C
= 25C
= 125C
Min.
-
-
-
-
-
-
-
-
Typ.
125
146
525
1.2
1.0
4.8
8.4
61
Max
1.5
www.fairchildsemi.com
-
-
-
-
-
-
-
Units
nC
ns
V
A