FGH80N60FD2TU Fairchild Semiconductor, FGH80N60FD2TU Datasheet - Page 5

• Manufacturer Part Number: FGH80N60FD2TU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH80N60FD2TU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH80N60FD Rev. A2
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. Vge
Figure 9. Gate Charge Characteristics
Figure 11. Turn-Off Switching SOA
200
100
15
12
10
20
16
12
9
6
3
0
1
8
4
0
0
1
4
Common Emitter
T
Safe Operating Area
V
C
GE
I
C
= 25
Characteristics
= 20A
= 20V, T
Collector-Emitter Voltage, V
o
C
Gate-Emitter Voltage, V
8
C
Gate Charge, Q
V
= 100
10
50
cc
= 100V
o
C
40A
12
80A
g
300V
100
[nC]
100
Common Emitter
T
C
GE
= 125
16
CE
[V]
200V
[V]
o
C
1000
150
20
(Continued)
5
Figure 12. Turn-On Characteristics vs.
Figure 8. Capacitance Characteristics
Figure 10. SOA Characteeristics
5000
4000
3000
2000
1000
0.01
400
100
100
200
0.1
10
10
0
1
5
0.1
1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
t
r
t
Collector-Emitter Voltage, V
d(on)
10
Gate Resistance
Gate Resistance, R
C
C
C
iss
oss
10
rss
20
1
Common Emitter
V
I
T
T
C
CC
C
C
30
= 40A
= 25
= 125
Common Emitter
V
T
= 400V, V
GE
C
100
G
= 25
o
[  ]
= 0V, f = 1MHz
C
o
CE
C
CE
o
[V]
C
40
10
[V]
GE
10 ms
100
10
1ms
= 15V
DC
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

s
s
1000
50
30