FGH80N60FD2TU Fairchild Semiconductor, FGH80N60FD2TU Datasheet - Page 4

• Manufacturer Part Number: FGH80N60FD2TU
• Description: IGBT 600V 80A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH80N60FD2TU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 40A
• Current - Collector (ic) (max): 80A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH80N60FD Rev. A2
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
160
120
160
120
80
40
3.5
3.0
2.5
2.0
1.5
1.0
80
40
0
0
0
25
0
T
Characteritics
Common Emitter
V
T
T
C
Temperature at Variant Current Level
GE
C
C
= 25
= 25
= 125
= 15V
o
Collector-Emitter Voltage, V
1
Collector-Emitter Voltage, V
o
C
20V
C
2
o
C
50
Case Temperature, T
2
12V
4
15V
3
75
6
V
GE
4
40A
80A
20A
Common Emitter
V
C
GE
= 8V
[
10V
CE
o
CE
100
= 15V
C]
[V]
8
[V]
5
6
10
125
4
Figure 2. Typical Saturation Voltage
160
120
Figure 4. Transfer Characteristics
160
120
Figure 6. Saturation Voltage vs. Vge
20
16
12
80
40
80
40
8
4
0
0
0
4
0
2
T
Common Emitter
V
T
T
C
C
C
CE
= 125
I
C
= 25
= 125
= 20V
= 20A
Collector-Emitter Voltage, V
o
o
2
C
C
o
Gate-Emitter Voltage, V
4
C
Gate-Emitter Voltage,V
8
20V
Characteristics
4
6
40A
12V
12
15V
80A
6
8
V
Common Emitter
T
GE
C
GE
= 25
= 8V
GE
16
10V
[V]
CE
o
[V]
C
8
[V]
10
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20
10
12