HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 3

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2009 Fairchild Semiconductor Corporation
Electrical Specifications
NOTE:
Typical Performance Curves
Diode Reverse Recovery Time
Thermal Resistance
3. Turn-Off Energy Loss (E
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
150
125
100
150
125
100
75
50
25
75
50
25
0
0
4
0
T
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
T
T
C
FIGURE 1. TRANSFER CHARACTERISTICS
C
C
= 150
= -40
= 25
PARAMETER
V
o
CE
o
o
C
C
C
V
1
, COLLECTOR TO EMITTER VOLTAGE (V)
GE
6
, GATE TO EMITTER VOLTAGE (V)
OFF
GE
CE
2
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
= 10V
= 10V
T
8
C
= 25
T
3
C
o
C, Unless Otherwise Specified
= 150
T
C
SYMBOL
10
o
= -40
C
R
t
θJC
4
rr
T
o
C
C
CE
= 25
HGTG30N60C3D
= 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
o
C
I
I
IGBT
Diode
12
EC
EC
5
= 30A, dI
= 1.0A, dI
TEST CONDITIONS
EC
EC
/dt = 100A/µs
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
/dt = 100A/µs
150
125
100
150
125
100
75
50
25
75
50
25
0
0
0
0
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T
FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
V
GE
V
= 15V
GE
V
V
CE
CE
= 15.0V
2
1
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
T
C
= -40
MIN
o
12.0V
4
-
-
-
-
C
2
TYP
52
42
-
-
6
3
7.0V
HGTG30N60C3D Rev. B
MAX
0.6
1.3
60
50
T
C
T
8
C
= 150
4
= 25
C
= 25
o
UNITS
o
o
o
10.0V
C
9.5V
8.5V
8.0V
7.5V
9.0V
C
C/W
C/W
ns
ns
o
C
10
5