HGTG30N60C3D Fairchild Semiconductor, HGTG30N60C3D Datasheet - Page 7

• Manufacturer Part Number: HGTG30N60C3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60C3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 63A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 63A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -40°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Test Circuit and Waveforms
©2009 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 19. DIODE FORWARD CURRENT vs FORWARD
200
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT
10
1
0
R
G
150
= 3Ω
VOLTAGE DROP
o
0.5
C
100
o
V
C
EC
1.0
, FORWARD VOLTAGE (V)
25
o
C
L = 100µH
RHRP3060
1.5
+
-
2.0
(continued)
V
DD
2.5
= 480V
HGTG30N60C3D
3.0
V
V
I
GE
CE
CE
Figure 20. RECOVERY TIME vs FORWARD CURRENT
60
50
40
30
20
10
0
1
t
Figure 22. SWITCHING TEST WAVEFORMS
t
t
T
rr
a
b
C
= 25
t
d(OFF)I
o
C, dI
90%
10%
I
EC
EC
, FORWARD CURRENT (A)
/dt = 100A/µs
t
fI
E
OFF
5
90%
E
ON
10
10%
t
d(ON)I
HGTG30N60C3D Rev. B
t
rI
30