HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet

IGBT N-CH UFS 600V 30A TO-247

HGTG30N60B3D

Manufacturer Part Number
HGTG30N60B3D
Description
IGBT N-CH UFS 600V 30A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG30N60B3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
208W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG30N60B3D
Manufacturer:
TI
Quantity:
430
Part Number:
HGTG30N60B3D
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Ordering Information
NOTE: When ordering, use the entire part number.
Features
• 60A, 600V, T
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
©2004 Fairchild Semiconductor Corporation
HGTG30N60B3D
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
PART NUMBER
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
C
= 25
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
o
C
TO-247
o
C and 150
PACKAGE
o
C. The IGBT used is the
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
G30N60B3D
BRAND
J
= 150
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
o
C
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Packaging
Symbol
April 2004
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
JEDEC STYLE TO-247
G
HGTG30N60B3D
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
C
E
E
C
HGTG30N60B3D Rev. B2
G
4,587,713
4,644,637
4,801,986
4,883,767

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HGTG30N60B3D Summary of contents

Page 1

... Data Sheet 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...

Page 2

... D 1. -55 to 150 J STG 260 MIN TYP 600 - 150 1. 150 C - 1 480V 200 - CE (PK 600V (PK) - 7.2 CES V = 15V - 170 20V - 230 137 - 58 - 550 - 680 UNITS MAX UNITS - V 250 1 250 190 nC 250 800 J 900 J HGTG30N60B3D Rev. B2 ...

Page 3

... FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA MIN TYP o = 150 275 - 90 - 1300 - 1600 - 1. 225 150 15V 100 200 175 150 125 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE (V) CE MAX UNITS - 320 ns 150 ns 1550 J 1900 J 2 0.6 C/W o 1.3 C/W 500 600 700 HGTG30N60B3D Rev. B2 ...

Page 4

... 200 150 100 COLLECTOR TO EMITTER VOLTAGE ( 1mH 480V G CE 4.0 3.5 3.0 2 150 10V OR 15V J GE 2.0 1 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 500 450 400 350 300 250 200 150 150 10V OR 15V HGTG30N60B3D Rev. B2 ...

Page 5

... COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 120 1mH 480V 100 T = 150 10V AND 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA (REF 600V 200V 400V 100 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 10V 10V AND 15V 50 60 150 200 HGTG30N60B3D Rev. B2 ...

Page 6

... VOLTAGE DROP ©2004 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued IES OES 2 C RES COLLECTOR TO EMITTER VOLTAGE (V) CE DUTY FACTOR PEAK RECTANGULAR PULSE DURATION ( -55 C 2.5 3.0 3.5 4.0 FREQUENCY = 1MHz /dt = 200A FORWARD CURRENT (A) EC FIGURE 18. RECOVERY TIME vs FORWARD CURRENT HGTG30N60B3D Rev. B2 ...

Page 7

... A 50% duty factor was used (Figure 3) and the D ) are approximated and E are defined in the switching waveforms OFF is the integral of the instantaneous during turn-on and i.e., the collector current equals zero ( d(ON d(ON d(OFF The the OFF during 0). CE HGTG30N60B3D Rev. B2 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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