HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet - Page 6

• Manufacturer Part Number: HGTG30N60B3D
• Description: IGBT N-CH UFS 600V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG30N60B3D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 208W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 208W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
200
175
150
125
100
75
50
25
0
0
10
10
10
-1
-2
10
0
0.5
VOLTAGE DROP
-5
0.50
0.20
0.10
0.05
0.02
0.01
1.0
V
EC
SINGLE PULSE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
1.5
, FORWARD VOLTAGE (V)
100
10
o
C
-4
2.0
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
25
o
C
2.5
10
8
6
4
2
0
-55
0
o
Unless Otherwise Specified (Continued)
C
3.0
V
10
CE
-3
t
1
3.5
, COLLECTOR TO EMITTER VOLTAGE (V)
5
, RECTANGULAR PULSE DURATION (s)
C
C
C
RES
IES
OES
4.0
10
10
-2
15
DUTY FACTOR, D = t
PEAK T
50
40
30
20
10
FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
0
FREQUENCY = 1MHz
1
T
C
J
= 25
= (P
20
D
o
10
C, dI
X Z
-1
2
t
EC
t
t
JC
rr
b
a
1
I
EC
/dt = 200A/ s
/ t
X R
25
2
, FORWARD CURRENT (A)
JC
) + T
5
C
10
0
P
D
10
t
1
HGTG30N60B3D Rev. B2
t
2
10
20
1
30