HGTG30N60B3D Fairchild Semiconductor, HGTG30N60B3D Datasheet - Page 5

IGBT N-CH UFS 600V 30A TO-247

HGTG30N60B3D

Manufacturer Part Number
HGTG30N60B3D
Description
IGBT N-CH UFS 600V 30A TO-247
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTG30N60B3D

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
60A
Power - Max
208W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
60A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HGTG30N60B3D
Manufacturer:
TI
Quantity:
430
Part Number:
HGTG30N60B3D
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Performance Curves
©2004 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
300
250
200
150
100
55
50
45
40
35
30
25
300
250
200
150
100
50
0
10
10
4
R
FIGURE 13. TRANSFER CHARACTERISTIC
G
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
= 3 , L = 1mH, V
EMITTER CURRENT
EMITTER CURRENT
I
I
CE
CE
5
T
T
20
, COLLECTOR TO EMITTER CURRENT (A)
J
J
20
, COLLECTOR TO EMITTER CURRENT (A)
V
= 150
= 25
GE
, GATE TO EMITTER VOLTAGE (V)
o
6
o
C, V
C, V
CE
T
T
C
GE
J
30
GE
30
= 480V
= 25
= 25
CE
= 10V, V
7
T
= 10V, V
J
= 10V
o
o
= 25
C
C, T
o
J
GE
C, T
GE
8
T
= 150
40
40
C
= 15V
= 15V
= -55
J
= 150
o
R
C, V
Unless Otherwise Specified (Continued)
G
o
9
C
= 3 , L = 1mH,
o
GE
C, V
50
50
T
V
C
= 15V
CE
GE
= 150
10
= 480V
= 10V
o
C
60
60
11
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
16
14
12
10
250
200
150
100
120
100
80
60
40
8
6
4
2
0
50
0
0
10
10
I
g (REF)
T
R
R
J
FIGURE 14. GATE CHARGE WAVEFORMS
G
G
= 25
= 3 , L = 1mH, V
= 3 , L = 1mH, V
EMITTER CURRENT
CURRENT
T
I
CE
o
J
= 1mA, R
I
CE
C, T
= 150
20
20
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
50
J
= 150
o
V
V
C, V
CE
L
CE
Q
= 10 , T
G
= 400V
T
o
GE
= 600V
, GATE CHARGE (nC)
CE
C, V
CE
J
30
30
= 25
= 10V AND 15V
= 480V
= 480V
GE
T
J
C
o
100
C, T
= 15V
= 25
V
= 25
CE
J
o
o
= 200V
= 150
C, V
C
40
40
GE
o
C, V
= 10V AND 15V
HGTG30N60B3D Rev. B2
150
GE
50
50
= 10V
200
60
60

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