HGT1S10N120BNS Fairchild Semiconductor, HGT1S10N120BNS Datasheet - Page 2

• Manufacturer Part Number: HGT1S10N120BNS
• Description: IGBT NPT N-CHAN 1200V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S10N120BNS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
Collector Current Continuous
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
©2002 Fairchild Semiconductor Corporation
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
1. Pulse width limited by maximum junction temperature.
2. I
3. V
At T
At T
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CE
CE(PK)
C
C
= 25
= 110
= 20A, L = 400 H, T
o
= 840V, T
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
PARAMETER
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
J
= 125
C
J
C
= 25
= 25
o
> 25
C, R
o
o
J
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
o
T
C.
G
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 150
C
T
= 10
= 25
C
= 25
GE
GE
o
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
C, Unless Otherwise Specified
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
o
C, Unless Otherwise Specified
SYMBOL
V
V
Q
BV
BV
CE(SAT)
SSOA
GE(TH)
V
I
I
G(ON)
GES
CES
GEP
CES
ECS
I
I
V
I
V
I
V
T
L = 400 H, V
I
I
V
C
C
C
C
C
C
GE
GE
J
CE
CE
= 250 A, V
= 10mA, V
= 10A,
= 90 A, V
= 10A, V
= 10A,
= 150
= 1200V
= 15V
= 20V
= 600V
o
TEST CONDITIONS
C, R
CE
CE
CE(PK)
GE
GE
G
= 600V
= V
=
= 0V
= 0V
GE
= 1200V
T
T
T
T
T
V
V
J
, T
C
C
C
C
C
GE
GE
V
C110
GEM
= 25
= 125
= 150
= 25
= 150
GES
CES
STG
GE
C25
pkg
CM
= 15V
= 20V
SC
SC
AV
D
L
= 15V,
o
o
C
C
o
o
o
C
C
C
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
HGT1S10N120BNS
HGTG10N120BN
HGTP10N120BN
55A at 1200V
-55 to 150
1200
MIN
6.0
15
55
1200
2.38
298
300
260
-
-
-
-
-
-
-
-
-
35
17
80
80
15
20
30
8
TYP
2.45
10.4
150
100
130
3.7
6.8
-
-
-
-
-
-
MAX
250
120
150
2.7
4.2
250
2
-
-
-
-
-
-
UNITS
W/
mJ
o
o
o
W
V
A
A
A
V
V
C
C
C
UNITS
o
s
s
C
mA
nC
nC
nA
V
V
V
V
V
A
V
A
A