HGT1S10N120BNS Fairchild Semiconductor, HGT1S10N120BNS Datasheet - Page 5

• Manufacturer Part Number: HGT1S10N120BNS
• Description: IGBT NPT N-CHAN 1200V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S10N120BNS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2002 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
100
40
35
30
25
20
15
400
350
300
250
200
150
100
80
60
40
20
0
0
7
R
0
G
T
DUTY CYCLE <0.5%, V
FIGURE 13. TRANSFER CHARACTERISTIC
PULSE DURATION = 250 s
J
= 10 , L = 2mH, V
= 25
T
I
CE
V
C
EMITTER CURRENT
EMITTER CURRENT
8
GE
I
= 150
CE
o
, COLLECTOR TO EMITTER CURRENT (A)
C, T
= 12V, V
V
, COLLECTOR TO EMITTER CURRENT (A)
GE
o
5
J
9
C
5
, GATE TO EMITTER VOLTAGE (V)
= 150
T
C
GE
= 25
CE
o
10
C, V
= 15V, T
V
o
GE
= 960V
T
CE
C
J
GE
T
= 12V, V
= 25
= 20V
C
R
10
11
= 12V
10
J
= -55
G
= 25
o
= 10 , L = 2mH, V
C, T
GE
o
o
C
12
J
C
= 15V, T
= 150
Unless Otherwise Specified (Continued)
o
15
13
15
C, V
J
= 150
GE
CE
14
= 15V
= 960V
o
C
15
20
20
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
20
15
10
300
250
200
150
100
50
40
30
20
10
5
0
50
0
0
0
0
I
G (REF)
R
FIGURE 14. GATE CHARGE WAVEFORMS
G
= 10 , L = 2mH, V
T
J
EMITTER CURRENT
CURRENT
I
I
20
CE
CE
= 25
= 1mA, R
V
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
CE
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
o
T
C, V
= 1200V
5
V
J
5
CE
= 25
Q
GE
L
40
G
= 60 , T
= 400V
T
, GATE CHARGE (nC)
o
= 12V OR 15V
J
C, T
T
CE
= 150
J
= 25
V
J
= 960V
CE
R
C
= 150
60
G
o
10
= 25
o
10
C, V
= 800V
C OR T
= 10 , L = 2mH, V
o
o
GE
C, V
C
= 12V OR 15V
J
GE
80
= 150
= 12V
15
15
o
C, V
CE
100
GE
= 960V
= 15V
120
20
20