HGT1S10N120BNS Fairchild Semiconductor, HGT1S10N120BNS Datasheet - Page 8

• Manufacturer Part Number: HGT1S10N120BNS
• Description: IGBT NPT N-CHAN 1200V TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGT1S10N120BNS

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 35A
• Power - Max: 298W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 35 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 298 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 35 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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