HGT1S10N120BNS Fairchild Semiconductor, HGT1S10N120BNS Datasheet - Page 8
HGT1S10N120BNS
Manufacturer Part Number
HGT1S10N120BNS
Description
IGBT NPT N-CHAN 1200V TO-263AB
Manufacturer
Fairchild Semiconductor
Datasheet
1.HGT1S10N120BNST.pdf
(8 pages)
Specifications of HGT1S10N120BNS
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 10A
Current - Collector (ic) (max)
35A
Power - Max
298W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
35 A
Gate-emitter Leakage Current
+/- 250 nA
Power Dissipation
298 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
35 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HGT1S10N120BNS
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
HGT1S10N120BNS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
HGT1S10N120BNST
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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