FGH75N60UFTU Fairchild Semiconductor, FGH75N60UFTU Datasheet - Page 4

• Manufacturer Part Number: FGH75N60UFTU
• Description: IGBT N-CH 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH75N60UFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 75A
• Current - Collector (ic) (max): 150A
• Power - Max: 452W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 150 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH75N60UF Rev. A1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
8000
6000
4000
2000
0.01
500
100
0.1
10
20
16
12
0
1
8
4
0
1
1
0
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
75A
I
C
C
C
C
10
res
ies
oes
= 40A
8
150A
12
Common Emitter
V
T
C
100
GE
Common Emitter
T
10
= 25
C
= 0V, f = 1MHz
GE
= 25
CE
CE
GE
o
[V]
[V]
C
100
o
10 ms
16
1ms
[V]
DC
C
10


s
s
1000
30
20
4
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
Figure 12. Load Current vs. Frequency
140
120
100
20
16
12
80
60
40
20
15
12
8
4
0
9
6
3
0
0
1
0
Duty cycle : 50%
T
Powe Dissipation = 181W
C
Common Emitter
T
C
= 100
= 25
o
o
4
50
C
Gate-Emitter Voltage, V
C
I
C
75A
= 40A
Gate Charge, Q
Frequency [kHz]
10
V
load Current : peak of square wave
V
CC
CC
100
8
= 400V
= 100V
200V
150A
12
150
g
100
Common Emitter
T
[nC]
C
GE
= 125
[V]
GE
16
300V
200
o
C
www.fairchildsemi.com
1000
20
250