FGH75N60UFTU Fairchild Semiconductor, FGH75N60UFTU Datasheet - Page 6

• Manufacturer Part Number: FGH75N60UFTU
• Description: IGBT N-CH 600V 75A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH75N60UFTU

• Igbt Type: Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 75A
• Current - Collector (ic) (max): 150A
• Power - Max: 452W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 150 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH75N60UF Rev. A1
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characteristics
500
100
10
1
1
Safe Operating Area
V
GE
= 15V, T
Collector-Emitter Voltage, V
C
= 125
10
1E-3
0.01
0.1
o
C
1
1E-5
Figure 20. Transient Thermal Impedance of IGBT
0.2
single pulse
0.5
0.1
0.01
0.05
0.02
100
1E-4
CE
[V]
1000
Rectangular Pulse Duration [sec]
1E-3
6
0.01
0.1
Duty Factor, D = t1/t2
Peak T
P
DM
j
= Pdm x Zthjc + T
t
1
t
2
1
C
10
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