IKW08T120 Infineon Technologies, IKW08T120 Datasheet - Page 5

• Manufacturer Part Number: IKW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 70W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
r r
r r
/d t
TrenchStop
j
=150 C
5
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
C C
G E
R
G
=1 5 0 C,
=1 5 0 C
F
1 )
1 )
= 6 00 V , I
= 8 1 ,
/ d t =6 0 0 A/ s
= 60 0 V, I
= 0/ 15 V ,
=1 8 0n H,
= 3 9p F
Conditions
®
Series
F
= 8 A,
C
=8 A ,
min.
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-
-
-
-
-
-
-
-
-
-
IKW08T120
Value
1.08
2.28
typ.
570
140
200
320
1.2
2.3
40
26
20
Rev. 2.2 Dec 07
max.
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-
-
-
-
-
-
-
-
-
-
Unit
ns
mJ
ns
µC
A
A/ s