IKW08T120 Infineon Technologies, IKW08T120 Datasheet - Page 8

• Manufacturer Part Number: IKW08T120
• Description: IGBT 1200V 16A 70W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW08T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 8A
• Current - Collector (ic) (max): 16A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 16A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 70W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 70W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.0 A
• Ic(max) @ 100°: 8.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
Figure 9. Typical switching times as a
100ns
Figure 11. Typical switching times as a
10ns
10ns
1ns
0°C
t
t
t
t
t
t
t
t
d(off)
r
f
d(on)
d(on)
r
f
d(off)
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
5A
J
I
CE
GE
,
C
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
50°C
10A
C
GE
=8A, R
=0/15V, R
J
CE
=150°C,
100°C
=600V,
G
=81Ω,
15A
G
=81Ω,
TrenchStop
150°C
8
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100 ns
7V
6V
5V
4V
3V
2V
1V
0V
®
10 ns
-50°C
1 ns
Series
t
t
t
t
d(off)
f
d(on)
r
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
( I
T
C
CE
J
,
0°C
= 0.3mA)
=600V, V
JUNCTION TEMPERATURE
R
G
,
GATE RESISTOR
50°C
GE
IKW08T120
=0/15V, I
J
=150°C,
100°C
Rev. 2.2 Dec 07
C
=8A,
150°C
max.
typ.
min.