SKW07N120 Infineon Technologies, SKW07N120 Datasheet - Page 3

• Manufacturer Part Number: SKW07N120
• Description: IGBT NPT 1200V 16.5A 125W TO247
• Manufacturer: Infineon Technologies

Specifications of SKW07N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 8A
• Current - Collector (ic) (max): 16.5A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKW07N120XK

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
Power Semiconductors
1)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E.
F
F
t
t
t
t
E
E
E
t
t
t
Q
I
d i
t
t
t
t
E
E
E
t
t
t
Q
I
d i
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
d ( o n )
r
d ( o f f )
f
r r
S
F
r r m
o n
o f f
t s
o n
o f f
t s
r r
r r
r r
r r
/ d t
/ d t
j
j
=25 C
=150 C
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
T
V
I
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
C
j
j
j
j
C C
G E
R
C C
G E
R
G
G
= 25 C ,
= 25 C ,
F
= 150 C
= 8 A ,
= 150 C
F
1 )
1 )
1 )
1 )
= 80 0 V , I
= 80 0 V , I
= 4 7 ,
= 4 7 ,
/d t= 400A/ s
/d t= 500A/ s
3
= 80 0 V, I
=15V/0V,
= 80 0 V,
=15V/0V,
=1 80nH,
=1 80nH,
=40pF
=40pF
Conditions
Conditions
F
F
C
= 8 A ,
= 8 A ,
=8 A ,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SKW07N120
Value
Value
typ.
typ.
440
400
490
170
110
0.6
0.4
1.0
0.3
1.0
0.7
1.7
1.1
27
29
21
60
30
26
30
15
9
Rev. 2_2
max.
max.
0.55
1.35
570
590
0.8
1.2
0.9
2.1
35
38
27
36
31
36
Sep 08
Unit
ns
mJ
ns
A
A/ s
Unit
ns
mJ
ns
A
A/ s
C
C