SKW07N120 Infineon Technologies, SKW07N120 Datasheet - Page 5

• Manufacturer Part Number: SKW07N120
• Description: IGBT NPT 1200V 16.5A 125W TO247
• Manufacturer: Infineon Technologies

Specifications of SKW07N120

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 8A
• Current - Collector (ic) (max): 16.5A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 16.5 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 16.5 A
• Ic(max) @ 100°: 7.9 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SKW07N120XK

Power Semiconductors
25A
20A
15A
10A
25A
20A
15A
10A
Figure 7. Typical transfer characteristics
(V
5A
0A
5A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
T
J
CE
=-40°C
V
1V
V
T
,
GE
J
GE
COLLECTOR
=+25°C
=17V
T
,
J
5V
15V
13V
11V
9V
7V
=+150°C
GATE
2V
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
25A
20A
15A
10A
Figure 6. Typical output characteristics
(T
5A
0A
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
COLLECTOR
GE
j
,
=17V
JUNCTION TEMPERATURE
0°C
15V
13V
11V
9V
7V
2V
SKW07N120
3V
50°C
-
EMITTER VOLTAGE
4V
Rev. 2_2
100°C
5V
I
6V
I
150°C
I
C
C
C
=8A
=4A
=16A
Sep 08
7V