SKW07N120 Infineon Technologies, SKW07N120 Datasheet - Page 4

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SKW07N120

Manufacturer Part Number
SKW07N120
Description
IGBT NPT 1200V 16.5A 125W TO247
Manufacturer
Infineon Technologies
Datasheet

Specifications of SKW07N120

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 8A
Current - Collector (ic) (max)
16.5A
Power - Max
125W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
16.5 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Switching Frequency
Fast IGBT 10-40 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
16.5 A
Ic(max) @ 100°
7.9 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SKW07N120XK

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Power Semiconductors
35A
30A
25A
20A
15A
10A
150W
125W
100W
Figure 1. Collector current as a function of
switching frequency
(T
V
Figure 3. Power dissipation as a function
of case temperature
(T
5A
0A
75W
50W
25W
GE
j
j
10Hz
0W
= +15V/0V, R
25°C
150 C, D = 0.5, V
150 C)
f,
100Hz
T
SWITCHING FREQUENCY
50°C
C
,
I
c
CASE TEMPERATURE
T
G
C
=110°C
= 47 )
T
75°C
1kHz
C
=80°C
CE
= 800V,
100°C
10kHz
I
c
125°C
100kHz
4
0.1A
Figure 4. Collector current as a function of
case temperature
(V
10A
20A
15A
10A
1A
5A
0A
GE
25°C
1V
Figure 2. Safe operating area
(D = 0, T
V
15V, T
CE
,
COLLECTOR
T
50°C
C
j
,
10V
C
CASE TEMPERATURE
= 25 C, T
150 C)
75°C
SKW07N120
-
EMITTER VOLTAGE
100V
j
100°C
150 C)
Rev. 2_2
1000V
125°C
1ms
50 s
DC
t
15 s
200 s
p
=5 s
Sep 08

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