IHW20N120R2 Infineon Technologies, IHW20N120R2 Datasheet
IHW20N120R2
Specifications of IHW20N120R2
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IHW20N120R2 Summary of contents
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... CE(sat),Tj=25°C j,max 20A 1.55V 175°C Symbol jmax ≤ 175° jmax limited jmax < IHW20N120R2 PG-TO-247-3 Marking Package H20R1202 PG-TO-247-3 Value Unit 1200 130 120 ±20 V ±25 330 W -40...+175 °C -55...+175 260 Rev. 1.4 Febr. 08 ...
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... 25° 125 ° 175 ° =0.5mA = 25° 175 ° =20V =20V, I =20A IHW20N120R2 Max. Value Unit 0.45 K/W 0.45 40 Value Unit min. Typ. max. 1200 - - V - 1.55 1. 1.45 1 1.65 - 5.1 5.8 6.4 µ 2500 - - 100 none Ω Rev. 1.4 ...
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... 5Ω 80nH σ =39pF C σ =175 °C j Symbol Conditions = 175 ° =20A 5V 5Ω 180 σ = σ due to dynamic test circuit in Figure E. σ 3 IHW20N120R2 - 1887 - 143 - Value Unit min. typ. Max. - 359 - 1 1 Value Unit min. Typ. Max. - 427 - 2 ...
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... V CE Figure 2. IGBT Safe operating area = 600V, CE 40A 30A 20A 10A 0A 125°C 150°C 25°C Figure 4. DC Collector current as a function 4 IHW20N120R2 =1µ 20µs 50µs 500µs 5ms 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE ( 25°C, C ≤175°C;V =15V) ...
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... V COLLECTOR CE Figure 6. Typical output characteristic (T j 2.5V 2.0V 1.5V 1.0V 0.5V 0.0V 0°C 8V 10V T J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature ( IHW20N120R2 =20V V GE 15V 13V 11V EMITTER VOLTAGE = 175°C) =40A I C =20A I C =10A I C 50°C 100° ...
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... Figure 10. Typical switching times as a =15Ω d(off 125°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a =600V, =29Ω IHW20N120R2 t d(off 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω GATE RESISTOR G function of gate resistor (inductive load, T =175°C, V =600V =0/15V, I ...
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... Figure 14. Typical turn-off energy as a =15Ω, G 1.5mJ 1.0mJ 0.5mJ 0.0mJ 600V V Figure 16. Typical turn-off energy as a =600V, =15Ω IHW20N120R2 E off 30Ω 40Ω 50Ω 60Ω 70Ω GATE RESISTOR G function of gate resistor (inductive load, T =175°C, V =600V =0/15V, I ...
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... K/W τ τ 10ms 100ms Figure 20. Diode transient thermal impedance as a function of pulse width (D=t / IHW20N120R2 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage (V =0V MHz) GE τ 0.0788 1.04*10 0.183 1.52*10 0.162 9.51*10 0.05 0.0505 4.95*10 0. 0.01 τ τ ...
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... Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors Soft Switching Series 2.0V 1.5V 1.0V 0.5V 0.0V 1.5V 2.0V 0°C Figure 22. Typical diode forward voltage as a function of junction temperature 9 IHW20N120R2 =40A I F 20A 10A 50°C 100°C 150° JUNCTION TEMPERATURE J Rev. 1.4 Febr. 08 ...
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... Power Semiconductors IHW20N120R2 Soft Switching Series PG-TO247-3 10 Rev. 1.4 Febr. 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors IHW20N120R2 Soft Switching Series i Figure C. Definition of diodes switching characteristics τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L capacity τ τ and Stray σ σ Rev. 1.4 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors IHW20N120R2 Soft Switching Series 12 Rev. 1.4 ...