IHW20N120R2 Infineon Technologies, IHW20N120R2 Datasheet - Page 9

• Manufacturer Part Number: IHW20N120R2
• Description: IGBT 1200V 40A 330W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20N120R2

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.75V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 330W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1.2 KV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 20 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IHW20N120R2XK

Power Semiconductors
35A
30A
25A
20A
15A
10A
5A
0A
Figure 21. Typical diode forward current as
a function of forward voltage
0.0V
0.5V
V
F
,
FORWARD VOLTAGE
T
J
=25°C
175°C
1.0V
1.5V
2.0V
Soft Switching Series
9
2.0V
1.5V
1.0V
0.5V
0.0V
Figure 22. Typical diode forward voltage
as a function of junction temperature
0°C
T
J
,
JUNCTION TEMPERATURE
IHW20N120R2
50°C
100°C
Rev. 1.4
I
F
=40A
20A
10A
150°C
Febr. 08