IHW20N120R2 Infineon Technologies, IHW20N120R2 Datasheet - Page 6

• Manufacturer Part Number: IHW20N120R2
• Description: IGBT 1200V 40A 330W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW20N120R2

• Package / Case: TO-247-3 (Straight Leads)
• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.75V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 330W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1.2 KV
• Collector-emitter Saturation Voltage: 1.85 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 20 A
• Power Dissipation: 330 W
• Maximum Operating Temperature: + 175 C
• Continuous Collector Current Ic Max: 20 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IHW20N120R2XK

Power Semiconductors
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
1000ns
100ns
100ns
10ns
25°C
0A
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
T
CE
GE
J
I
50°C
,
C
,
=600V, V
JUNCTION TEMPERATURE
=0/15V, I
COLLECTOR CURRENT
10A
75°C
C
GE
=20A, R
=0/15V, R
100°C
20A
J
CE
=175°C,
=600V,
G
125°C
=29Ω,
G
=15Ω,
30A
t
d(off)
150°C
t
t
Soft Switching Series
f
f
t
d(off)
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as a
1000ns
6V
5V
4V
3V
2V
100ns
-50°C
10Ω
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(I
T
C
GE
20Ω
J
,
= 0.5mA)
=0/15V, I
t
0°C
JUNCTION TEMPERATURE
f
R
G
IHW20N120R2
,
t
30Ω
d(off)
GATE RESISTOR
C
=20A,
40Ω
50°C
J
=175°C, V
50Ω
Rev. 1.4
100°C
60Ω
min.
typ.
CE
=600V,
max.
Febr. 08
70Ω