IGW40T120 Infineon Technologies, IGW40T120 Datasheet
IGW40T120
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IGW40T120 Summary of contents
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... TrenchStop Series ® and Fieldstop technology CE(sat) http://www.infineon.com/igbt/ T Marking Code CE(sat),Tj=25°C j,max 1.7V G40T120 150°C Symbol jmax IGW40T120 PG-TO-247-3 Package PG-TO-247-3 Value Unit 1200 105 105 ± µs 270 W °C -40...+150 -55...+150 260 Rev. 2.4 Nov. 09 ...
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... TrenchStop Series Symbol Conditions Symbol Conditions 0V 5mA ( 15V 40A 25° 5° 0° 5mA 1200V , 25° 0° 20V 40A IGW40T120 Max. Value Unit 0.45 K/W 40 Value Unit min. typ. max. 1200 - - V - 1.8 2 2.3 - 5.0 5 600 Ω Rev. 2.4 Nov. 09 ...
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... Symbol Conditions 0° 00V 40A 15Ω 180nH, σ =39pF E σ Energy losses include E “tail” and diode reverse recovery due to dynamic test circuit in Figure E. σ 3 IGW40T120 - 2500 - pF - 130 - - 110 - - 203 - 210 - A Value Unit min. typ. max 480 - - 3 3.2 ...
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... 70A 60A 50A 40A 30A 20A 10A 0A 25°C 125° Figure 4. Collector current as a function of case temperature ( IGW40T120 t =3µs p 10µs 50µs 150µs 500µs 20ms DC 10V 100V 1000V - EMITTER VOLTAGE = 25°C, C =15V) GE 75°C 125°C ...
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... T , JUNCTION TEMPERATURE J Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V IGW40T120 EMITTER VOLTAGE I =80A C I =40A C I =25A C I =10A C 0°C 50°C 100°C Rev. 2.4 ...
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... Dynamic test circuit in Figure 150°C -50°C 0° Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 1.5mA) C =15Ω IGW40T120 15Ω 25Ω 35Ω 45Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =40A max. typ. min. 50°C 100°C 150°C JUNCTION TEMPERATURE Rev ...
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... 0mJ 150°C 400V 500V V , COLLECTOR CE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, T =15Ω Dynamic test circuit in Figure E) 7 IGW40T120 and E include losses off 15Ω 25Ω 35Ω GATE RESISTOR G =150°C, J =600V, V =0/15V, I =40A, ...
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... Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE 300A 200A 100A 0A 16V 12V V GE Figure 20. Typical short circuit collector current as a function of gate- =25°C) emitter voltage IGW40T120 C iss C oss C rss 10V 20V - EMITTER VOLTAGE =0V MHz) 14V 16V 18V , - GATE EMITTETR VOLTAGE ≤ 600V, T ≤ ...
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... I C 40A 40A 20A 20A 0us 1.5us 0.5us Figure 22. Typical turn off behavior = 150° Dynamic test circuit in Figure E) τ 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.51* τ 100ms 9 IGW40T120 600V 400V 200V 0V 1us 1.5us t, TIME =15/0V, R =15Ω 150° Rev. 2.4 Nov. 09 ...
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... Power Semiconductors ® TrenchStop Series PG-TO247-3 10 IGW40T120 Rev. 2.4 Nov. 09 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors ® TrenchStop Series τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and Stray capacity C 11 IGW40T120 τ τ =180nH σ =39pF. σ Rev. 2.4 Nov. 09 ...
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... Power Semiconductors ® TrenchStop Series 12 IGW40T120 Rev. 2.4 Nov. 09 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors ® TrenchStop Series 13 IGW40T120 Rev. 2.4 Nov. 09 ...