IGW40T120 Infineon Technologies, IGW40T120 Datasheet - Page 9

IGBT 1200V 75A 270W TO247-3

IGW40T120

Manufacturer Part Number
IGW40T120
Description
IGBT 1200V 75A 270W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW40T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
270W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Max
270W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
No.
RoHS Compliant
No. Of Pins
3
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW40T120
Manufacturer:
INFINEON
Quantity:
2 000
Part Number:
IGW40T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Power Semiconductors
10
10
10
600V
400V
200V
Figure 21. Typical turn on behavior
Figure 23. IGBT transient thermal resistance
0V
-1
-2
-3
K/W
K/W
K/W
0us
V
I
10µs
C
CE
0.05
D=0.5
0.2
0.1
(V
Dynamic test circuit in Figure E)
(D = t
0.5us
GE
100µs
=0/15V, R
0.01
single pulse
0.02
t
p
P
/ T)
,
PULSE WIDTH
t,
1ms
TIME
1us
R
G
0.159
0.133
0.120
0.038
R , ( K / W )
1
=15Ω, T
C
1
=
10ms
τ
1
/ R
1.5us
1
j
C
= 150°C,
1.10*10
1.56*10
1.35*10
1.51*10
2
100ms
=
τ
τ
, ( s )
2
/ R
TrenchStop
R
2
-1
-2
-3
-4
2
60A
40A
20A
0A
9
Figure 22. Typical turn off behavior
60A
40A
20A
0A
®
0us
Series
V
I
C
CE
(V
Dynamic test circuit in Figure E)
0.5us
GE
=15/0V, R
t,
1us
TIME
IGW40T120
G
=15Ω, T
Rev. 2.4
1.5us
j
= 150°C,
Nov. 09
600V
400V
200V
0V

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