IGW40T120 Infineon Technologies, IGW40T120 Datasheet - Page 3

IGBT 1200V 75A 270W TO247-3

IGW40T120

Manufacturer Part Number
IGW40T120
Description
IGBT 1200V 75A 270W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW40T120

Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
270W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Max
270W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
No.
RoHS Compliant
No. Of Pins
3
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW40T120
Manufacturer:
INFINEON
Quantity:
2 000
Part Number:
IGW40T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
1)
2)
Power Semiconductors
Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L
σ
and Stray capacity C
1)
C
C
C
Q
L
I
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
C ( S C )
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
E
o n
o f f
t s
o n
o f f
t s
i s s
o s s
r s s
G a t e
TrenchStop
σ
j
j
=25 °C
=150 °C
3
due to dynamic test circuit in Figure E.
V
V
f= 1 M Hz
V
V
V
V
T
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
σ
σ
j
j
j
C E
G E
C C
G E
G E
C C
C C
G E
C C
G E
G
σ
G
σ
= 25° C,
= 15 0° C
2 )
2 )
= 25° C
2 )
2 )
= 1 5Ω ,
= 15Ω,
= 25V,
= 0V,
= 9 60V, I
= 1 5V
= 1 5V,t
= 6 00V, I
= 0/ 1 5V ,
= 180nH,
= 6 00V, I
= 0/ 1 5V ,
= 180nH,
=39pF
=39pF
= 600V,
Conditions
Conditions
®
Series
S C
C
C
C
≤10µs
= 40A,
= 40A,
= 40A
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW40T120
Value
Value
2500
10.4
typ.
typ.
130
110
203
210
480
580
120
3.3
3.2
6.5
5.0
5.4
13
48
34
70
52
40
Rev. 2.4
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Nov. 09
pF
nC
nH
A
Unit
ns
mJ
Unit
ns
mJ

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