FDY3000NZ Fairchild Semiconductor, FDY3000NZ Datasheet - Page 2

• Manufacturer Part Number: FDY3000NZ
• Description: MOSFET N-CH DUAL SC89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDY3000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-666
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.7Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY3000NZTR

1. R
FDY3000NZ Rev B
Notes:
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
V
t
Q
the drain pins. R
DSS
GSS
d(on)
r
d(off)
f
rr
FS
BV
GS(th)
V
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
JA
DSS
GS(th)
T
T
DSS
J
J
is the sum of the j unction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
JC
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
( Note 2)
a)
( Note 2)
200° C/W when
mounted on a 1in
of 2 oz copper
CA
is determined by the user' s board design
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
dI
D
D
F
T
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
F
= 600 mA,
2
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
A
/dt = 100 A/µs
pad
= 25° C unless otherwise noted
= 0 V,
= 16 V,
=
=
= V
= 4.5 V,
= 2.5 V,
= 1.8 V,
= 4.5 V, I
= 5 V,
= 10 V,
= 10 V,
= 4.5 V,
= 10 V,
= 4.5 V
= 0 V,
Test Conditions
GS
12 V, V
4.5 V, V
,
I
D
S
=600mA, T
= 150 mA
I
I
I
I
I
I
V
I
R
I
V
D
D
D
D
D
D
D
D
GS
DS
DS
GEN
GS
= 250 A
= 250 A
= 600 mA
= 500 mA
= 150 mA
= 600 mA
= 1 A,
= 600 mA,
= 0 V
= 0 V
= 0 V
= 0 V,
= 6
J
(Note 2)
= 125 C
b) 280° C/W when mounted on a
2. Pulse Test: Pulse Width < 300 s,
3. The diode connected between the gate
Min
minimum pad of 2 oz copper
Duty Cycle < 2.0%
and source serves only as protection
againts ESD. No gate overvoltage
rating is implied.
Scale 1 : 1 on letter size paper
0.6
20
Typ Max
0.25
0.37
0.73
0.35
0.16
0.26
1.0
–
1.8
2.4
0.8
0.7
14
60
20
10
6
8
8
8
1
3
www.fairchildsemi.com
0.70
0.85
1.25
1.00
1.3
4.8
1.1
1.2
12
16
16
1
10
1
Units
mV/ C
mV/ C
nC
nC
nC
nC
pF
pF
pF
nS
ns
ns
ns
ns
V
S
V
A
A
A
V