FDY3000NZ Fairchild Semiconductor, FDY3000NZ Datasheet - Page 3

• Manufacturer Part Number: FDY3000NZ
• Description: MOSFET N-CH DUAL SC89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDY3000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-666
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.7Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY3000NZTR

Typical Characteristics
FDY3000NZ Rev B
1.6
1.4
1.2
0.8
0.6
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
Figure 3. On-Resistance Variation with
1
0
1
0
-50
0.5
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
I
V
V
D
DS
GS
GS
= 600mA
-25
= 5V
= 4.5V
= 4.5V
3.5V
V
0.25
T
V
GS
0
1
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
3.0V
T
A
25
= 125
2.5V
o
C
1.5
0.5
50
-55
75
o
C
25
o
C
0.75
o
100
C)
2
2.0V
125
2.5
150
1
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
1
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2
1
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
T
A
= 0V
= 2.0V
= 25
Gate-to-Source Voltage.
0.2
V
0.2
o
SD
C
V
, BODY DIODE FORW ARD VOLTAGE (V)
GS
2
T
, GATE TO SOURCE VOLTAGE (V)
2.5V
A
= 125
0.4
I
D
, DRAIN CURRENT (A)
o
C
0.4
3.0V
25
3
0.6
o
T
C
A
= 125
-55
0.6
o
C
o
3.5V
C
0.8
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4
0.8
I
D
1
= 300mA
4.5V
1.2
1
5