FDMB3800N Fairchild Semiconductor, FDMB3800N Datasheet - Page 2

• Manufacturer Part Number: FDMB3800N
• Description: MOSFET N-CH DUAL 30V MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB3800N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 465pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMB3800NTR

FDMB3800N Rev.C1
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
I
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Drain - Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 80°C/W when mounted on
a 1 in
2
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
pad of 2 oz copper
J
= 25°C unless otherwise noted
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
V
V
I
I
I
V
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
GS
GS
= 4.8A, di/dt = 100A/µs
= 250µA, referenced to 25°C
= 250µA, V
= 250µA, referenced to 25°C
= 0V to 5V
=15V, V
= 15V, I
= 10V, R
= 5V, I
= 0V, I
= 24V,
= 0V
= V
= 10V, I
= 4.5V, I
= 10V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
GS
D
D
= 1.25A
D
GEN
= 4.8A
GS
= 1A
D
DS
= 4.8A
= 4.8A, T
= 250µA
= 0V,
= 4.3A
= 0V
V
= 0V
= 6Ω
I
D
DD
T
= 7.5A
J
= 15V
= 55°C
(Note 2)
J
= 125°C
θJC
is guaranteed by design while R
b. 165°C/W when mounted on a
minimum pad of 2 oz copper
Min
30
1
350
0.8
1.0
1.5
Typ
1.9
90
40
17
21
32
41
43
14
-4
3
7
24
8
5
2
4
1.25
±100
Max
465
120
1.2
θCA
5.6
60
16
10
34
10
40
51
61
10
www.fairchildsemi.com
3
1
is determined by
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
A
V
V
S
V