FDMB3800N Fairchild Semiconductor, FDMB3800N Datasheet - Page 4

• Manufacturer Part Number: FDMB3800N
• Description: MOSFET N-CH DUAL 30V MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB3800N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 465pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMB3800NTR

FDMB3800N Rev.C1
Typical Characteristics
10
8
6
4
2
0
0.01
100
0.1
0
10
Figure 7.
1
0.1
I
D
r
180
150
120
DS(on)
SINGLE PULSE
R
90
60
30
= 4.8A
0.0001
0
θJA
Figure 9.
1
V
T
GS
J
LIMIT
= 165
= 25
= 10V
o
o
Gate Charge Characteristics
C
C/W
2
V
Operating Area
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
Forward Bias Safe
g
1
, GATE CHARGE (nC)
3
0.001
Figure 11. Single Pulse Maximum Power Dissipation
4
T
V
J
DS
= 25°C unless otherwise noted
5
= 10V
10
0.01
6
20V
100us
1ms
10ms
100ms
1s
10s
DC
7
15V
100
0.1
8
t, PULSE WIDTH (s)
4
6
5
4
3
2
1
0
600
500
400
300
200
100
25
1
0
Figure 10.
0
R
θJA
Current vs Ambient Temperature
Figure 8.
= 80°C/W
C
rss
50
4
V
Maximum Continuous Drain
to Source Voltage
T
10
DS
A
SINGLE PULSE
R
V
, AMBIENT TEMPERATURE (
C
, DRAIN TO SOURCE VOLTAGE (V)
θJA
GS
Capacitance vs Drain
oss
T
A
= 4.5V
= 165°C/W
= 25°C
75
8
V
GS
C
= 10V
iss
100
100
12
o
C)
125
www.fairchildsemi.com
16
1000
V
f = 1MHz
GS
= 0 V
150
20