SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet

SSM6L36FE(TE85L,F)

Manufacturer Part Number

SSM6L36FE(TE85L,F)

Description

MOSFET N-CH/P-CH 20V .5A ES6

Manufacturer

Toshiba

Datasheet

1.SSM6L36FETE85LF.pdf (9 pages)

Specifications of SSM6L36FE(TE85L,F)

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

630 mOhm @ 200mA, 5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

500mA, 330mA

Vgs(th) (max) @ Id

1V @ 1mA

Gate Charge (qg) @ Vgs

1.23nC @ 4V

Input Capacitance (ciss) @ Vds

46pF @ 10V

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

ES6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SSM6L36FE(TE85LF)TR

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○ High-Speed Switching Applications

•

Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

Note 1: Total rating

1.5-V drive

Low ON-resistance Q1 Nch: R

Drain–source voltage

Gate–source voltage

Drain current

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Absolute Maximum Ratings (Ta = 25°C)

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Mounted on an FR4 board

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm

Characteristics

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type

Q2 Pch: R

Pulse

= 1.52Ω (max) (@V

= 1.14Ω (max) (@V

= 0.85Ω (max) (@V

= 0.66Ω (max) (@V

= 0.63Ω (max) (@V

= 3.60Ω (max) (@V

= 2.70Ω (max) (@V

= 1.60Ω (max) (@V

= 1.31Ω (max) (@V

SSM6L36FE

Symbol

(Note 1)

GSS

DSS

stg

−55 to 150

Rating

1000

-330

-660

±10

500

150

-20

±8

= 1.5 V)

= 1.8 V)

= 2.5 V)

= 4.5 V)

= 5.0 V)

= -1.5 V)

= -1.8 V)

= -2.8 V)

= -4.5 V)

× 6)

Unit

°C

Weight: 3.0 mg (typ.)

JEDEC

JEITA

TOSHIBA

ES6

1.Source1

2.Gate1

3.Drain2

1.2±0.05

1.6±0.05

SSM6L36FE

4.Source2

5.Gate2

6.Drain1

2-2N1D

2008-06-05

Unit: mm

Related parts for SSM6L36FE(TE85L,F)

SSM6L36FE(TE85L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Q1 Electrical Characteristics Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off ...

Page 3

Q1 Switching Time Test Circuit (a) Test Circuit 2 μ ≤ D.U. 1% < Ω) (Z out Common Source ...

Page 4

Q1 (N-ch MOSFET) I – 1000 10 V 4.5 V 800 600 400 200 0 0 0.2 0.4 0.6 Drain-source voltage V R – (ON ° ...

Page 5

Q1 (N-ch MOSFET – 10000 Common Source 3000 Ta = 25°C 1000 300 100 Drain current – 100 ...

Page 6

Q2 (P-ch MOSFET) I – -700 Common Source -8V -4. °C -600 -500 -400 -300 -200 -100 0 0 -0.5 Drain-source voltage V R – (ON ...

Page 7

Q2 (P-ch MOSFET – 1000 Common Source 25°C 300 100 -10 Drain current – 100 Common ...

Page 8

Q1, Q2 Common P * – 250 Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm 200 150 100 150 0 -40 - Total Rating Ambient temperature ...

Page 9

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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