SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet

MOSFET N-CH/P-CH 20V .5A ES6

SSM6L36FE(TE85L,F)

Manufacturer Part Number
SSM6L36FE(TE85L,F)
Description
MOSFET N-CH/P-CH 20V .5A ES6
Manufacturer
Toshiba
Datasheet

Specifications of SSM6L36FE(TE85L,F)

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
630 mOhm @ 200mA, 5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
500mA, 330mA
Vgs(th) (max) @ Id
1V @ 1mA
Gate Charge (qg) @ Vgs
1.23nC @ 4V
Input Capacitance (ciss) @ Vds
46pF @ 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SSM6L36FE(TE85LF)TR
○ High-Speed Switching Applications
Q1
Q2
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Total rating
1.5-V drive
Low ON-resistance Q1 Nch: R
Drain–source voltage
Gate–source voltage
Drain current
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Absolute Maximum Ratings (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm
Characteristics
Characteristics
Characteristics
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
Q2 Pch: R
Pulse
Pulse
DC
DC
R
R
R
R
R
R
R
on
on
on
on
on
on
on
on
on
= 1.52Ω (max) (@V
= 1.14Ω (max) (@V
= 0.85Ω (max) (@V
= 0.66Ω (max) (@V
= 0.63Ω (max) (@V
= 3.60Ω (max) (@V
= 2.70Ω (max) (@V
= 1.60Ω (max) (@V
= 1.31Ω (max) (@V
SSM6L36FE
P
D
Symbol
Symbol
Symbol
V
V
V
V
(Note 1)
T
I
I
T
GSS
GSS
DSS
DSS
I
DP
I
DP
stg
D
D
ch
−55 to 150
Rating
Rating
Rating
GS
GS
GS
GS
GS
GS
GS
GS
GS
1000
-330
-660
±10
500
150
150
-20
20
±8
1
= 1.5 V)
= 1.8 V)
= 2.5 V)
= 4.5 V)
= 5.0 V)
= -1.5 V)
= -1.8 V)
= -2.8 V)
= -4.5 V)
2
× 6)
Unit
Unit
Unit
mW
mA
mA
°C
°C
V
V
V
V
Weight: 3.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
ES6
1.Source1
2.Gate1
3.Drain2
1
2
3
1.2±0.05
1.6±0.05
SSM6L36FE
4.Source2
5.Gate2
6.Drain1
2-2N1D
2008-06-05
-
-
Unit: mm
6
5
4

Related parts for SSM6L36FE(TE85L,F)

SSM6L36FE(TE85L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

Q1 Electrical Characteristics Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Turn-on time Switching time Turn-off ...

Page 3

Q1 Switching Time Test Circuit (a) Test Circuit 2 μ ≤ D.U. 1% < Ω) (Z out Common Source ...

Page 4

Q1 (N-ch MOSFET) I – 1000 10 V 4.5 V 800 600 400 200 0 0 0.2 0.4 0.6 Drain-source voltage V R – (ON ° ...

Page 5

Q1 (N-ch MOSFET – 10000 Common Source 3000 Ta = 25°C 1000 300 100 Drain current – 100 ...

Page 6

Q2 (P-ch MOSFET) I – -700 Common Source -8V -4. °C -600 -500 -400 -300 -200 -100 0 0 -0.5 Drain-source voltage V R – (ON ...

Page 7

Q2 (P-ch MOSFET – 1000 Common Source 25°C 300 100 -10 Drain current – 100 Common ...

Page 8

Q1, Q2 Common P * – 250 Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm 200 150 100 150 0 -40 - Total Rating Ambient temperature ...

Page 9

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords