SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q1 (N-ch MOSFET)
10000
3000
1000
300
100
100
10
30
10
50
30
10
8
6
4
2
0
5
3
1
0.1
1
0
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common Source
I D = 0.5 A
Ta = 25°C
Common Source
V DS = 3 V
Ta = 25°C
Drain-source voltage V
Dynamic Input Characteristic
Total Gate Charge Qg (nC)
V DD = 10 V
Drain current I
10
1
1
|Y
C – V
fs
| – I
V DD = 16 V
DS
D
D
10
100
(mA)
2
DS
C oss
C rss
(V)
C iss
1000
100
3
5
1000
1000
100
100
0.1
10
10
1
0
1
t on
t f
t r
t off
Ta =100 °C
25 °C
Drain-source voltage V
Drain current I
–0.5
10
I
DR
t – I
– V
−25 °C
D
DS
D
–1.0
100
Common Source
V GS = 0 V
Common Source
V DD = 10 V
V GS = 0 to 2.5 V
Ta = 25 °C
R G = 4.7 Ω
G
DS
(mA)
SSM6L36FE
(V)
S
D
2008-06-05
I
DR
–1.5
1000