SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q1 Electrical Characteristics
Q2 Electrical Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-source forward voltage
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Drain-source forward voltage
Note 2: Pulse test
Characteristics
Characteristics
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
GSS
DSS
V
Q
Q
t
Q
t
DSF
on
off
oss
rss
iss
th
fs
(Ta = 25°C)
(Ta = 25°C)
gs
gd
g
V
V
|
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
GSS
DSS
Q
V
Q
t
t
Q
DSF
oss
on
off
rss
iss
th
fs
gs
gd
g
|
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -100mA, V
= -80mA, V
= -40mA, V
= -30mA, V
=330mA, V
= -16 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, I
= ±8 V, V
= -4 V
= -10 V, I
= 0 to -2.5 V, R
I
I
V
V
V
V
I
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DS
GS
DD
GS
= 1 mA, V
= 1 mA, V
= 200 mA, V
= 200 mA, V
= 200 mA, V
= 100 mA, V
= 50 mA, V
= -0.5 A, V
Test Conditions
=20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= 10V, I
= ±10 V, V
= 4.0 V
= 10 V, I
= 0 to 2.5 V, R
2
D
D
GS
GS
GS
GS
GS
GS
DS
D
DS
GS
= -1 mA
= -100mA
GS
GS
= -100mA
= 0 V
= 8 V
= -330mA
= 0 V
= -2.8 V
= -1.8 V
= -1.5 V
= 0 V
Test Condition
= 0 V
= 0 V, f = 1 MHz
= -4.5 V
D
D
GS
GS
D
G
GS
D
GS
GS
= 1 mA
= 200 mA
GS
= 0.5 A
GS
GS
GS
GS
= 50Ω
DS
= 200 mA
= 0V
= - 10 V
= 0 V
= 0V
= 1.5 V
= 0V, f = 1 MHz
= 5.0 V (Note2)
= 4.5 V (Note2)
= 2.5 V (Note2)
= 1.8 V (Note2)
= 0V
G
= 50 Ω
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
Min
-0.3
190
-20
-12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.35
Min
420
20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.95
1.22
1.80
2.23
10.3
0.85
0.35
0.88
200
6.1
1.2
43
90
⎯
⎯
⎯
⎯
⎯
⎯
-0.88
Typ.
0.46
0.51
0.66
0.81
0.95
10.8
1.23
0.60
0.63
840
7.3
46
30
75
⎯
⎯
⎯
⎯
⎯
SSM6L36FE
Max
1.31
1.60
2.70
3.60
-1.0
-10
1.2
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2008-06-05
Max
0.63
0.66
0.85
1.14
1.52
-1.2
1.0
⎯
⎯
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
mS
μA
μA
nC
pF
ns
V
V
Ω
V
Unit
mS
μA
μA
nC
pF
ns
V
V
Ω
V