SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q1 (N-ch MOSFET)
1000
1.5
1.0
0.5
800
600
400
200
0
3
2
1
0
−50
0
0
0
200m A / 4.5 V
Common Source
4.5 V
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
0.2
2
200m A / 2.5 V
0
R
10 V
DS (ON)
R
DS (ON)
4
0.4
100m A / 1.8 V
I
D
50
– V
– V
DS
I D = 50m A / V GS = 1.5 V
– Ta
0.6
GS
6
25 °C
GS
Common Source
Ta = 25 °C
I D =200mA
Common Source
DS
100
200m A / 5.0 V
2.5 V
V GS = 1.2 V
(V)
0.8
Ta = 100 °C
8
(V)
− 25 °C
1.8 V
1.5 V
150
10
1.0
4
1000
0.01
100
0.1
10
1.0
0.5
1
3
2
0
0
−50
1
0
0
Ta = 100 °C
1.5 V
V GS = 4.5V
Common Source
Ta = 25°C
Gate-source voltage V
Ambient temperature Ta (°C)
1.8 V
200
Drain current I
0
− 25 °C
1.0
R
2.5V
DS (ON)
400
I
D
25 °C
V
th
– V
50
– Ta
GS
– I
D
600
D
2.0
(mA)
GS
Common Source
V DS = 3 V
Common Source
V DS = 3 V
I D = 1 mA
100
SSM6L36FE
800
(V)
2008-06-05
150
3.0
1000