SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q2 (P-ch MOSFET)
-600
-500
-100
-700
-400
-300
-200
5
4
3
2
1
0
0
5
4
3
2
1
0
−50
0
0
Common Source
Ta = 25 °C
Common Source
-80mA / -2.8 V
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
-2
0
-40mA / -1.8 V
R
-0.5
DS (ON)
-8V
R
DS (ON)
I
D
– V
50
-4
-4.5V
– V
I D = -100mA / V GS = -4.5 V
DS
25 °C
– Ta
GS
-1.0
-30mA / -1.5V
GS
DS
-2.8V
I D =-100mA
Common Source
Ta = 25°C
100
-6
V GS =-1.2 V
Ta = 100 °C
(V)
(V)
− 25 °C
-1.8 V
-1.5 V
-2.5V
-1.5
150
-8
6
-1000
-0.01
-100
-0.1
-1.0
-0.5
-10
-1
5
4
3
2
1
0
0
−50
0
0
25 °C
-1.5 V
-1.8 V
-2.8 V
Common Source
Ta = 25°C
V GS = -4.5 V
Common Source
V DS = -3 V
-100
Gate-source voltage V
Ambient temperature Ta (°C)
Ta = 100 °C
Drain current I
-200
0
R
DS (ON)
-300
I
− 25 °C
D
V
– V
th
-1.0
50
– Ta
GS
-400
– I
D
D
(mA)
GS
V DS = -3 V
I D = -1 mA
-500
Common Source
100
SSM6L36FE
(V)
-600
2008-06-05
-700
150
-2.0