SSM6L36FE(TE85L,F) Toshiba, SSM6L36FE(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: SSM6L36FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .5A ES6
• Manufacturer: Toshiba

Specifications of SSM6L36FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 500mA, 330mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 1.23nC @ 4V
• Input Capacitance (ciss) @ Vds: 46pF @ 10V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6L36FE(TE85LF)TR

Q1 Switching Time Test Circuit
Q2 Switching Time Test Circuit
Marking
Q1 Usage Considerations
the SSM6L36FE). Then, for normal switching operation, V
than V
Q2 Usage Considerations
of the SSM6L36FE). Then, for normal switching operation, V
than V
Take this into consideration when using the device.
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Let V
Take this into consideration when using the device.
Let V
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
(a) Test Circuit
1
−
6
2.5V
th.
th.
th
th
LL4
0
This relationship can be expressed as: V
This relationship can be expressed as: V
be the voltage applied between gate and source that causes the drain current (I
be the voltage applied between gate and source that causes the drain current (I
5
2
2.5 V
10 μs
V
D.U.
V
(Z
Common Source
Ta = 25°C
DD
IN
out
0
V
D.U.
V
(Z
Common Source
Ta = 25°C
: t
DD
IN
4
3
= -10 V
≤
r
out
= 50 Ω)
, t
10 μs
: t
1%
f
= 10 V
≤
r
= 50 Ω)
< 5 ns
, t
IN
1%
f
< 5 ns
IN
Equivalent Circuit
R
V
OUT
L
DD
R
V
OUT
L
DD
GS(off)
GS(off)
6
1
Q1
(b) V
(c) V
(c) V
(b) V
< V
< V
GS(on)
5
2
3
OUT
OUT
IN
GS(on)
th
th
IN
Q2
(top view)
< V
< V
4
3
must be higher than V
GS(on).
GS(on).
must be higher than V
V
DS (ON)
V
V
V
2.5 V
DD
DS (ON)
DD
0 V
−2.5 V
0 V
t
on
10%
t
th,
on
10%
D
D
th,
t
and V
r
) to below (1 mA for the Q1 of
) to below (−1 mA for the Q2
10%
90%
t
r
and V
90%
10%
GS(off)
GS(off)
t
90%
off
t
SSM6L36FE
90%
off
must be lower
t
must be lower
f
2008-06-05
t
f