AOP607 Alpha & Omega Semiconductor Inc, AOP607 Datasheet - Page 6

MOSFET N/P-CH COMPL 60V 8-PDIP

AOP607

Manufacturer Part Number
AOP607
Description
MOSFET N/P-CH COMPL 60V 8-PDIP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOP607

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
56 mOhm @ 4.7A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4.7A, 3.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10.5nC @ 10V
Input Capacitance (ciss) @ Vds
540pF @ 30V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
8-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1141-1
785-1141-1
785-1141-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AOP607
Manufacturer:
ALPHA
Quantity:
20 000
AOP607
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
130
120
110
100
90
80
70
200
180
160
140
120
100
80
60
20
15
10
5
0
0
2
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
3
2
Fig 1: On-Region Characteristics
1
-10V
4
V
GS
=-4.5V
Gate Voltage
5
4
-V
2
-V
25°C
-I
GS
DS
D
-4.5V
(A)
(Volts)
(Volts)
6
-3.5V
6
3
V
7
I
D
GS
=-3.4A
V
=-10V
GS
=-3.0V
8
125°C
8
-4.0V
4
9
10
10
5
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
30
25
20
15
10
5
0
1.8
1.6
1.4
1.2
0.8
1
2
1
0
0.0
1.5
Figure 2: Transfer Characteristics
Figure 4: On-Resistance vs. Junction
25
Figure 6: Body-Diode Characteristics
125°C
0.2
50
V
2
DS
Temperature (°C)
125°C
=-5V
-V
Temperature
V
GS
I
75
0.4
GS
D
-V
=-3.4A
2.5
(Volts)
=-10V
SD
(Volts)
100
25°C
25°C
0.6
3
125
V
GS
I
D
=-3A
=-4.5V
3.5
0.8
150
175
4
1.0

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