FDS6982 Fairchild Semiconductor, FDS6982 Datasheet

MOSFET N-CH DUAL 30V 8SOIC

FDS6982

Manufacturer Part Number
FDS6982
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS6982

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
760pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
50 S, 40 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.6 A to 6.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.2V
Rohs Compliant
Yes
Fall Time
7 ns, 18 ns
Rise Time
14 ns, 11 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6982TR

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1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench MOSFETs designed to maximize power
conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction losses (less
than 20m at V
Applications
J
DSS
GSS
D
, T
JA
JC
Battery powered synchronous DC:DC converters.
Embedded DC:DC conversion.
Device Marking
stg
FDS6982
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
SO-8
GS
D2
= 4.5V).
D1
D1
pin 1
- Continuous
- Pulsed
S2
Parameter
G2
FDS6982
Device
S1
G1
T
A
= 25°C unless otherwise noted
Reel Size
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
13”
Features
Q2: 8.6A, 30V. R
Q1: 6.3A, 30V. R
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
5
6
7
8
Q2
8.6
30
30
20
Tape Width
R
R
DS(on)
DS(on)
-55 to +150
12mm
DS(on)
DS(on)
Q1
Q2
1.6
0.9
78
40
2
1
= 0.015
= 0.028
= 0.020
= 0.035
Q1
6.3
30
20
20
@ V
@ V
@ V
@ V
4
3
2
1
2500 units
Quantity
GS
GS
GS
GS
June 1999
= 10V
= 10V
= 4.5V
= 4.5V
Units
FDS6982, Rev. D1
C/W
C/W
W
V
V
A
C

Related parts for FDS6982

FDS6982 Summary of contents

Page 1

... DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific ...

Page 2

... I = 250 250 A, Referenced 8 8 125 125 1.0 MHz mV All 1 A All 100 nA All -100 0.012 0.015 0.018 0.024 0.016 0.020 Q1 0.021 0.028 0.038 0.047 0.028 0.035 2085 pF Q1 760 Q2 420 pF Q1 160 Q2 160 FDS6982, Rev. D1 ...

Page 3

... S is determined by the user's board design.Thermal rating based on independant CA b) 125 C/W when 2 2 mounted on a 0.02 in pad of 2 oz. copper. Typ Max Units 2 3 1.3 Q2 0.72 1 0.74 1.2 c) 135 C/W when mounted on a minimum pad. FDS6982, Rev. D1 ...

Page 4

... C 1 0.1 0.01 0.001 0.0001 Figure 6. Body Diode Forward Voltage Variation with Source Current = 4.0V 4.5V 5.0V 6.0V 7.0V 10V DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.8 1 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDS6982, Rev 1.6 ...

Page 5

... Figure 8. Capacitance Characteristics. 30 100 100 0.01 0.1 Figure 10. Single Pulse Maximum f = 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 135 C 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. FDS6982, Rev. D1 ...

Page 6

... C 1 0.1 0.01 0.001 0.0001 Figure 16. Body Diode Forward Voltage Variation with Source Current = 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.8 1.2 1.6 , BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDS6982, Rev. D1 ...

Page 7

... Figure 18. Capacitance Characteristics. 30 100 100 0.01 0.1 Figure 20. Single Pulse Maximum f = 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 135 C 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. FDS6982, Rev. D1 ...

Page 8

... Typical Characteristics: Q1 & 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.01 Single Pulse 0.005 0.002 0.001 0.0001 0.001 Figure 21. Transient Thermal Response Curve. (continued) 0.01 0 TIME (sec ( 135°C/W JA P(pk ( Duty Cycle 100 300 FDS6982, Rev. D1 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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