FDS6982 Fairchild Semiconductor, FDS6982 Datasheet - Page 7

MOSFET N-CH DUAL 30V 8SOIC

FDS6982

Manufacturer Part Number
FDS6982
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS6982

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 6.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.3A, 8.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
760pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
50 S, 40 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.6 A to 6.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
8.6A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.2V
Rohs Compliant
Yes
Fall Time
7 ns, 18 ns
Rise Time
14 ns, 11 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6982TR

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Typical Characteristics: Q1
10
0.01
100
Figure 19. Maximum Safe Operating Area.
8
6
4
2
0
0.1
10
Figure 17. Gate-Charge Characteristics.
1
0
0.1
R
I
SINGLE PULSE
R
D
DS(ON)
= 6.3A
JA
V
T
GS
A
= 135
= 25
LIMIT
= 10V
o
o
C
C/W
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
, GATE CHARGE (nC)
DC
10s
1s
8
100ms
10ms
V
DS
10
1ms
= 5V
100 s
12
15V
(continued)
10V
100
16
1200
1000
30
25
20
15
10
800
600
400
200
5
0
0.01
Figure 18. Capacitance Characteristics.
0
0
Figure 20. Single Pulse Maximum
0.1
5
Power Dissipation.
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
10
1
15
C
C
C
10
ISS
OSS
RSS
20
SINGLE PULSE
R
100
JA
TA = 25
= 135
25
f = 1MHz
V
GS
FDS6982, Rev. D1
o
o
C/W
C
= 0 V
1000
30

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