FDS6982 Fairchild Semiconductor, FDS6982 Datasheet - Page 4

• Manufacturer Part Number: FDS6982
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS6982

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 8.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 760pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 50 S, 40 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.6 A to 6.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 8.6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.2V
• Rohs Compliant: Yes
• Fall Time: 7 ns, 18 ns
• Rise Time: 14 ns, 11 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6982TR

Typical Characteristics: Q2
50
40
30
20
10
50
40
30
20
10
0
0
1.6
1.4
1.2
0.8
0.6
0
1
1
Figure 1. On-Region Characteristics.
V
-50
GS
V
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
DS
= 10V
V
= 5V
I
D
GS
= 8.6A
-25
= 10V
5.0V
2
4.5V
V
with Temperature.
1
V
GS
T
DS
0
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
4.0V
25
3
2
T
50
A
= -55
3.5V
4
o
75
C
125
100
3.0V
o
o
25
C)
3
C
o
C
5
125
150
4
6
0.04
0.03
0.02
0.01
0.0001
0.001
0.01
1.8
1.6
1.4
1.2
0.8
0
100
0.1
Figure 6. Body Diode Forward Voltage
10
2
1
with Drain Current and Gate Voltage.
2
1
0
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
0
Variation with Source Current
with Gate-to-Source Voltage.
V
GS
V
GS
= 0V
V
= 4.0V
10
T
SD
and Temperature.
A
V
= 125
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
0.4
4.5V
, GATE TO SOURCE VOLTAGE (V)
o
I
C
D
5.0V
, DRAIN CURRENT (A)
20
25
o
C
6.0V
6
0.8
T
T
A
A
-55
= 125
= 25
7.0V
o
30
C
o
C
o
C
10V
1.2
8
40
I
D
= 4.5A
FDS6982, Rev. D1
50
1.6
10