FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 2

• Manufacturer Part Number: FDS8958A
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8958A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: + 7 A / - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958ATR; FDS8958A_NL

BV
∆BV
I
I
I
V
∆V
R
I
g
C
C
C
R
Electrical Characteristics
Symbol
Off Characteristics
DSS
GSSF
GSSR
On Characteristics
Dynamic Characteristics
D(on)
FS
∆T
GS(th)
∆T
DS(on)
iss
oss
rss
G
DSS
GS(th)
DSS
J
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
V
V
V
V
Q1
V
Q2
V
D
D
V
V
V
I
I
V
V
D
D
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
DS
GS
GS
DS
DS
GS
GS
= 250 µA, Referenced to 25°C
= -250 µA, Referenced to 25°C
= V
= V
= 5 V,
= -5 V,
= 15 V, V
= 10 V,
= 10 V, I
= 4.5 V,
= -10 V,
= -10 V, I
= -4.5 V,
= 10 V,
= -10 V,
= 15 mV,
= -15 V, V
= 0 V,
= 0 V,
= 24 V,
= -24 V,
= 20 V,
= -20 V,
GS
GS
T
Test Conditions
A
,
,
= 25°C unless otherwise noted
GS
D
D
GS
= 7 A, T
= -5 A, T
= 0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
I
I
V
V
V
V
I
I
I
I
I
I
V
V
I
I
f = 1.0 MHz
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
DS
DS
= 250 µA
= -250 µA
= 250 µA
= -250 µA
= 7 A
= 6 A
= -5 A
= -4 A
= 7 A
=-5 A
= 0 V
= 0 V
= 0 V
= 0 V
= 5 V
= -5 V
J
= 125°C
J
= 125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
All
-20
-30
20
-1
30
1
-1.7
-4.5
575
528
145
132
1.9
4.5
2.1
6.0
-23
19
27
24
42
57
65
25
10
65
70
25
-100
100
28
42
40
52
78
80
FDS8958A Rev F3 (W)
-3
-1
3
1
mV/°C
mV/°C
mΩ
pF
pF
pF
µA
nA
nA
Ω
V
A
S
V