FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 3

• Manufacturer Part Number: FDS8958A
• Description: MOSFET N/P-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS8958A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A, 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms / 0.052 Ohms
• Forward Transconductance Gfs (max / Min): 25 S, 10 S
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: + 7 A / - 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Dc: N/A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8958ATR; FDS8958A_NL

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
I
I
V
t
Q
Starting TJ = 25°C, L = 3mH, I
the drain pins. R
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
d(on)
r
d(off)
f
S
S M
rr
θJA
SD
g
gs
gd
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Maximum Plused Drain-Source Diode Forward Current
θJC
is guaranteed by design while R
a) 78°/W when
Parameter
mounted on a
0.5 in
copper
AS
AS
= 3A, V
= 6A, V
2
pad of 2 oz
DD
DD
= 30V, V
= 30V, V
(Note 2)
GS
GS
θCA
= 10V (Q2).
= 10V (Q1).
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
F
F
is determined by the user' s board design.
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 7 A, d
= -5 A, d
= 15 V, I
= 10V, R
= -15 V, I
= -10V, R
= 15 V, I
= -15 V, I
= 0 V, I
= 0 V, I
Test Conditions
b) 125°/W when
iF
iF
S
S
/d
/d
D
D
mounted on a .02 in
pad of 2 oz copper
GEN
= 1.3 A
= -1.3 A
D
D
t
GEN
t
= 1 A,
= 7 A, V
= 100 A/µs
= 100 A/µs
= -5 A,V
= -1 A,
= 6 Ω
= 6 Ω
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
= -10 V
2
(Note 2)
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
c) 135°/W when mounted on a
minimum pad.
-0.88
Typ Max Units
11.4
0.75
9.6
1.7
2.2
2.1
1.7
13
23
14
19
19
8
7
5
3
9
9
6
-1.3
-20
-1.2
1.3
1.2
16
13
16
14
10
24
37
25
17
20
FDS8958A Rev F3 (W)
6
nC
nC
nC
nS
nC
ns
ns
ns
ns
A
V
A