FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 3
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FDS8958A
Manufacturer Part Number
FDS8958A
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS8958A.pdf
(8 pages)
Specifications of FDS8958A
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 7 A / - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8958ATR
FDS8958A_NL
FDS8958A_NL
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS8958A
Manufacturer:
FSC
Quantity:
10 000
Part Number:
FDS8958A
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
FDS8958A SMD 8PIN
Manufacturer:
FAIRCHIL
Quantity:
6 522
Part Number:
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Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
FAIRCHILD
Quantity:
12 636
Part Number:
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Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
Symbol
Switching Characteristics
t
t
t
t
Q
Q
Q
I
I
V
t
Q
Starting TJ = 25°C, L = 3mH, I
the drain pins. R
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
d(on)
r
d(off)
f
S
S M
rr
θJA
SD
g
gs
gd
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
Maximum Plused Drain-Source Diode Forward Current
θJC
is guaranteed by design while R
a) 78°/W when
Parameter
mounted on a
0.5 in
copper
AS
AS
= 3A, V
= 6A, V
2
pad of 2 oz
DD
DD
= 30V, V
= 30V, V
(Note 2)
GS
GS
θCA
= 10V (Q2).
= 10V (Q1).
Q1
V
V
Q2
V
V
Q1
V
Q2
V
V
V
Q1
I
Q2
I
F
F
is determined by the user' s board design.
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 7 A, d
= -5 A, d
= 15 V, I
= 10V, R
= -15 V, I
= -10V, R
= 15 V, I
= -15 V, I
= 0 V, I
= 0 V, I
Test Conditions
b) 125°/W when
iF
iF
S
S
/d
/d
D
D
mounted on a .02 in
pad of 2 oz copper
GEN
= 1.3 A
= -1.3 A
D
D
t
GEN
t
= 1 A,
= 7 A, V
= 100 A/µs
= 100 A/µs
= -5 A,V
= -1 A,
= 6 Ω
= 6 Ω
T
A
= 25°C unless otherwise noted
GS
GS
= 10 V
= -10 V
2
(Note 2)
(Note 2)
(Note 2)
Type Min
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
c) 135°/W when mounted on a
minimum pad.
-0.88
Typ Max Units
11.4
0.75
9.6
1.7
2.2
2.1
1.7
13
23
14
19
19
8
7
5
3
9
9
6
-1.3
-20
-1.2
1.3
1.2
16
13
16
14
10
24
37
25
17
20
FDS8958A Rev F3 (W)
6
nC
nC
nC
nS
nC
ns
ns
ns
ns
A
V
A