FDS8958A Fairchild Semiconductor, FDS8958A Datasheet - Page 6
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FDS8958A
Manufacturer Part Number
FDS8958A
Description
MOSFET N/P-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS8958A.pdf
(8 pages)
Specifications of FDS8958A
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A, 5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohms / 0.052 Ohms
Forward Transconductance Gfs (max / Min)
25 S, 10 S
Drain-source Breakdown Voltage
+/- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
+ 7 A / - 5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Dc
N/A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8958ATR
FDS8958A_NL
FDS8958A_NL
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
FSC
Quantity:
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Manufacturer:
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Part Number:
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Quantity:
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Typical Characteristics: Q2 (P-Channel)
15
12
30
20
10
9
6
3
0
0
Figure 14. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
Figure 12. On-Region Characteristics.
0
1
Figure 16. Transfer Characteristics.
-50
V
GS
V
V
DS
GS
I
D
1.5
= -10V
= -5A
= -5V
= -10V
-25
1
-V
-V
DS
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
0
J
Temperature.
-6.0V
, JUNCTION TEMPERATURE (
2
25
2.5
-5.0V
3
50
3
-4.5V
T
75
A
4
= -55
3.5
-4.0V
o
100
o
C
C)
-3.5V
-3.0V
125
5
4
125
o
C
25
o
C
150
4.5
6
Figure 17. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.2
0.1
Figure 13. On-Resistance Variation with
Figure 15. On-Resistance Variation with
0.001
0
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
100
0.1
10
2
2
1
1
0
0
Drain Current and Gate Voltage.
T
A
= 25
V
V
GS
Gate-to-Source Voltage.
GS
o
0.2
=-4.0V
C
=0V
-V
-V
6
SD
-4.5V
GS
4
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
0.6
o
C
25
6
-7.0V
o
C
0.8
18
-55
-8.0V
o
C
1
8
FDS8958A Rev F3 (W)
24
I
-10V
D
1.2
= -2.5A
1.4
30
10