FDG6320C Fairchild Semiconductor, FDG6320C Datasheet

MOSFET N/P-CH DUAL 25V SC70-6

FDG6320C

Manufacturer Part Number
FDG6320C
Description
MOSFET N/P-CH DUAL 25V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDG6320C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 220mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA, 140mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
0.2 S, 0.12 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.22 A @ N Channel or 0.14 A @ P Channel
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6320C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDG6320C
Quantity:
4 500
© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
FDG6320C
Dual N & P Channel Digital FET
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance.
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETS. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
General Description
D
Absolute Maximum Ratings
DS
GSS
D
J
,T
JA
S
STG
SC70-6
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Ranger
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
SC70-6
D1
This
G2
pin 1
SOT-23
- Continuous
- Pulsed
device has been designed
S2
S1
T
A
= 25
G1
o
C unless other wise noted
D2
SuperSOT
(Note 1)
(Note 1)
TM
-6
Features
N-Ch 0.22 A, 25 V, R
P-Ch -0.14 A, -25V, R
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SOT-8
N-Channel
0.22
0.65
25
8
-55 to 150
415
0.3
6
DS(ON)
DS(ON)
SO-8
R
R
DS(ON)
DS(ON)
GS(th)
= 4.0
= 10
P-Channel
= 5.0
< 1.5 V).
= 13
-0.14
-0.4
-25
-8
6
4
@ V
@ V
November 1998
@ V
@ V
GS
GS
= 4.5 V,
= -4.5V,
GS
GS
SOIC-14
= -2.7V.
= 2.7 V.
FDG6320C Rev. D
Units
°C/W
°C
kV
W
V
V
A

Related parts for FDG6320C

FDG6320C Summary of contents

Page 1

... Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). TM SOT-8 SuperSOT - unless other wise noted A N-Channel (Note 1) (Note 1) November 1998 = 4 4.5 V, DS(ON 5 DS(ON -4.5V, DS(ON DS(ON) GS < 1.5 V). GS(th) SO P-Channel 25 - 0.22 -0.14 0.65 -0.4 0.3 -55 to 150 6 415 = 2 -2.7V. SOIC-14 Units °C kV °C/W FDG6320C Rev. D ...

Page 2

... P-Ch -0.65 -0.82 -1.5 o N-Ch -2 P-Ch 2.1 N-Ch 2 =125°C 5 3.7 5 P-Ch 7 =125°C J 10.4 13 N-Ch 0.22 P-Ch -0.14 N-Ch 0.2 P-Ch 0.12 N-Ch 9.5 P-Ch 12 N-Ch 6 P-Ch 7 N-Ch 1.3 P-Ch 1.5 FDG6320C Rev. D Units V o mV/ C µA µ mV ...

Page 3

... C/W on minimum mounting pad on FR-4 board in still air. JA Type Min Typ Max Units N- P- N- N- N-Ch 0.29 0.4 nC P-Ch 0.22 0.31 N-Ch 0.12 nC P-Ch 0.12 N-Ch 0.03 nC P-Ch 0.05 N-Ch 0.25 A P-Ch -0.25 N-Ch 0.8 1.2 V P-Ch -0.8 -1.2 is guaranteed by JC FDG6320C Rev. D ...

Page 4

... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.10A D T =125°C A 25° ,GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDG6320C.Rev D 5.0V 0.4 5 1.2 ...

Page 5

... Figure 9. Maximum Safe Operating Area. (continued MHz 0.1 0.5 0.6 Figure 8. Capacitance Characteristics 0.0001 Figure 10. Single Pulse Maximum Power C iss C oss C rss = DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6320C.Rev D 25 200 ...

Page 6

... Drain Current and Gate Voltage -0.07A 125° 25° 2 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. -4.5V 0.2 4 1.2 FDG6320C.Rev D ...

Page 7

... MHz V GS 0.5 0.1 0.4 0.5 Figure 18. Capacitance Characteristics 0.0001 0.001 20 40 Figure 20. Single Pulse Maximum Power C iss C oss C rss = 0 V 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. FDG6320C.Rev D 20 200 ...

Page 8

... Single Pulse 0.01 0.005 0.002 0.0001 0.001 Figure 21. Transient Thermal Response Curve. Transient thermalresponse will change depending on the circuit board design. 0.01 0 TIME (sec) 1 Thermal characterization performed using the conditions described in note 1. (continued) R ( =415 °C/W JA P(pk ( Duty Cycle 100 FDG6320C.Rev D 200 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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