FDG6320C Fairchild Semiconductor, FDG6320C Datasheet - Page 5

• Manufacturer Part Number: FDG6320C
• Description: MOSFET N/P-CH DUAL 25V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6320C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA, 140mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 0.2 S, 0.12 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.22 A @ N Channel or 0.14 A @ P Channel
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics: N-Channel
6
5
4
3
2
1
0
0.03
0.01
0.3
0.1
0
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate Charge Characteristics.
1
I
0.4
D
= 0.22A
SINGLE PULSE
R
0.1
V
T
JA
A
GS
0.8
= 415 °C/W
= 25°C
= 4.5V
V
DS
0.2
Q
g
, DRAIN-SOURCE VOLTAGE (V)
, GATE CHARGE (nC)
2
V
DS
0.3
= 5V
5
10V
0.4
10
0.5
25
0.6
40
50
40
30
20
10
0.0001
0
(continued)
30
15
8
5
3
2
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
0.001
= 0 V
Dissipation.
0.3
V
DS
0.01
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
1
0.1
3
1
SINGLE PULSE
R
JA
T = 25°C
A
=415°C/W
10
10
FDG6320C.Rev D
C oss
C iss
C rss
25
200